Agency for Science, Technology and Research

National University of Singapore

Institute of Materials Research and Engineering

Massachusetts Institute of Technology

Nanyang Technological University

Osram Opto Semiconductors Gmbh

Chartered Semiconductor Manufacturing Ltd (corporation)

Osram Gmbh

Other

Osram Opto Semiconductor Gmbh

Osram Opto Semi-conductors Gmbh Co. Ohg

Osram Opto Semiconductor Gmbh Co. Ohg

Soo Jin Chua

Senthil Kumar Ramadas

Benzhong Wang

Eugene A Fitzgerald

Li Hong Zhang

Ewald Karl Michael Guenther

Ewald Guenther

Kwang Hong Lee

Mark Auch

Eng Kian Kenneth Lee

Chew Beng Soh

Jing Hua Teng

Lin Karen Ke

Wei Liu

Kin Leong Pey

Hong Yee Low

Joseph Sylvester Chang

Chaw Sing Ho

Wei Ling Wang

Jinghua Teng

Kong Hean Lee

Chuan Seng Tan

Sudhiranjan Tripathy

Wei Shu

Siau Ben Chiah

Peng Li

Yong Qu

Ramam Akkipeddi

Alex See

Wei Huang

Kheng Chok Tee

Zhikuan Chen

Wei Hsuan Huang

Adrian Paul Burden

Peng Chen

Xiaodi Su

Jianyi Lin

Dongzhi Chi

Bing Wang

Cho Jui Tay

Kwok Wei Shah

Kenneth Eng Kian Lee

Zhonglin Miao

Zhongli Li

Lim Shuang Fang

Maosheng Hao

Ji Zhang

Siew Lok Toh

Hailong Zhou

Hui Pan

Furong Zhu

R Pg Karunasiri

Xiong Zhang

Mustafizur Rahman

Ee Leong Lim

Keyan Zang

Keith Cheng Yeow Ng

Haryono Hartono

Xinbo He

Ramadas Senthil Kumar

Tek Po Rinus

Mark Dai Joong Auch

Jian Rong Dong

Gang Li

Christopher P Sperring

Jinhua Teng

Wang Lin Yu

Jian Pei

BaoJun Li

G Karunasiri

Christopher Philip Sperring

Disclosed is a method of reducing surface unevenness of a semiconductor wafer (). In a preferred embodiment, the method comprises: removing a portion of a deposited layer and a protective layer thereon using a first slurry to provide an intermediate surface (). In the described embodiment, the deposited layer includes an epitaxial layer () and the protective layer includes a first dielectric layer (). The first slurry includes particles with a hardness level the same as or exceeding that of the epitaxial layer (). A slurry for use in wafer fabrication for reducing surface unevenness of a semiconductor wafer is also disclosed.

Method of reducing semiconductor substrate surface unevenness

Disclosed is a subpixel circuitcomprising: a first switching deviceresponsive to a digital periodic signal Vto provide a digital control signal Vrelating to a digital data signal V, the digital periodic signal Vdefining 2+1 time slots within each frame cycle, where N is a predetermined integer. The digital data signal Vhas a predetermined value at a predetermined one of the 2+1 time slots; and the subpixel circuitfurther comprises a second switching deviceresponsive to the control signal Vc to drive an associated light emitting element

Subpixel circuitry for driving an associated light element, and method, display system and electronic device relating to same

A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display is provided. The method comprising providing a first wafer comprising first layers disposed over a first substrate, said first layers comprising non-silicon based semiconductor material for forming p-n junction LEDs (light emitting devices); providing a second partially processed wafer comprising silicon-based CMOS (Complementary Metal Oxide Semiconductor) devices formed in second layers disposed over a second substrate, said CMOS devices for controlling the LEDs; and bonding the first and second wafers to form a composite wafer via a double-bonding transfer process.

Method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display

A method of fabricating a device on a carrier substrate, and a device on a carrier substrate. The method comprises providing a first substrate; forming one or more device layers on the first substrate; bonding a second substrate to the device layers on a side thereof opposite to the first substrate; and removing the first substrate.

Fabrication of a device on a carrier substrate

The present invention refers to a multilayer barrier film capable of encapsulating a moisture and/or oxygen sensitive electronic or optoelectronic device, the barrier film comprises at least one nanostructured layer comprising reactive nanoparticles capable of interacting with moisture and/or oxygen, the reactive nanoparticles being distributed within a polymeric binder, and at least one ultraviolet light neutralizing layer comprising a material capable of absorbing ultraviolet light, thereby limiting the transmission of ultraviolet light through the barrier film.

Multilayer film for encapsulating oxygen and/or moisture sensitive electronic devices

The present invention relates to a multilayer barrier film capable of encapsulating a moisture and/or oxygen sensitive electronic or optoelectronic device, the barrier film including at least one nanostructured layer including reactive nanoparticles capable of interacting with moisture and/or oxygen, the reactive nanoparticles being distributed within a polymeric binder, and at least one ultraviolet light neutralizing layer comprising a material capable of absorbing ultraviolet light, thereby limiting the transmission of ultraviolet light through the barrier film.

A barrier stack for encapsulating a moisture and/or oxygen sensitive electronic device is provided. The barrier stack comprises a multilayer film having at least one barrier layer having low moisture and/or oxygen permeability, and at least one sealing layer arranged to be in contact with a surface of the barrier layer, wherein the sealing material comprises reactive nanoparticles capable of interacting with moisture and/or oxygen, thereby retarding the permeation of moisture and/or oxygen through defects present in the barrier layer.

Nanoparticulate encapsulation barrier stack

The present invention relates to a method of forming polymer substrate with variable refractive index sensitivity, the method comprising the steps of: (a) contacting a metal-coated patterned mold with a polymer substrate at a temperature sufficient to deform said polymer substrate to thereby deposit a patterned mask of a metal film on the polymer substrate; and (b) etching away portions of said polymer substrate not covered by said patterned mask under conditions to form a region of variable refractive index sensitivity on said polymer substrate.

Method of forming a polymer substrate with variable refractive index sensitivity

An encapsulated device comprising an integrated gas permeation sensor is provided, comprising a base substrate with an electronic component arranged thereon being enclosed within an encapsulation for protecting the electronic component from moisture and/or oxygen; at least one sensor is arranged within the encapsulation to measure the permeation of gas into the encapsulation; each sensor comprises an electrically conductive sensing element comprising a moisture and/or oxygen sensitive material, wherein the reaction of said material with moisture and/or oxygen results in a change in the electrical resistance/conductivity of the sensor.

Encapsulated device with integrated gas permeation sensor

A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.

Method of at least partially releasing an epitaxial layer

A light emitting diode and a method of fabricating a light emitting diode, the diode has a first set of multiple quantum wells (MQWs), each of the MQWs of the first set comprising a wetting layer providing nucleation sites for quantum dots (QDs) or QD-like structures in a well layer of said each MQW; and a second set of MQWs, each of the MQWs of the second set formed so as to exhibit a photoluminescence (PL) peak wavelength shifted compared to the MQWs of the first set.

Tunable wavelength light emitting diode

A sensor for measuring gas permeability of a test material, comprising: an electrically conductive sensing element that comprises a water and/or oxygen sensitive material, wherein the reaction of said material with water or oxygen when the sensing element is contacted with water and/or oxygen results in a change in the electrical conductivity of the sensing element, and two electrodes electrically connected to the sensing element.

Sensor for measuring gas permeability of a test material

A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.

Fabrication of phosphor free red and white nitride-based LEDs

A light emitting diode structure and a method of forming a light emitting diode structure are provided. The structure includes a superlattice comprising, a first barrier layer; a first quantum well layer comprising a first metal-nitride based material formed on the first barrier layer; a second barrier layer formed on the first quantum well layer; and a second quantum well layer including the first metal-nitride based material formed on the second barrier layer; and wherein a difference between conduction band energy of the first quantum well layer and conduction band energy of the second quantum well layer is matched to a single or multiple longitudinal optical phonon energy for reducing electron kinetic energy in the superlattice.

Light emitting diode structure having superlattice with reduced electron kinetic energy therein

A growth method is proposed for high quality zinc oxide comprising the following steps: (1) growing a gallium nitride layer on a sapphire substrate around a temperature of 1000&#xb0; C.; (2) patterning a SiOmask into stripes oriented in the gallium nitride &#x3c;100&#x3e; or &#x3c;110&#x3e; direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10/cm, which will find important applications in future electronic and optoelectronic devices.

Method of zinc oxide film grown on the epitaxial lateral overgrowth gallium nitride template

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Singapore, Singapore

Soo Jin Chua