Samsung Display Co., Ltd.

Samhwa Paints Industries Co., Ltd.

Dongguan Dyt Electronic Tape Co., Ltd.

Soo Im Jeong

Young Gil Park

Moon Sung Kim

Na Ri Ahn

Ki Nam Kim

Kyung Lae Rho

Jung Hwa Park

Jae-Bum Han

Hyun Sook Kim

Sung Chan Jo

Jang Hwan Jeong

Jae Bum Han

Seung Kyu Lee

Sung Woo Kim

Jae Ho Choi

Chang Ho Lee

Sung Hwan Kim

Sung Su Kim

Chang Yong Jeong

Sang Won Shin

Sang Woo Sohn

Sung-Chan Jo

Jun Su Park

Doo Hyoung Lee

Hyun Ju Lee

Jae Gwan Lee

Kyeom Ryong Kim

Kyoung Seok Cho

Dong Hyeok Oh

Jae Duck Jung

Seong Gea Kim

Soon Jong Kim

Oh Nam Kwon

Oh Jung Kwon

Jung Hun Kim

Sung Wook Woo

Eun Kyeong Cha

A display device includes a first substrate having, defined thereon, an active region and a nonactive region around the active region; an active element layer on a first surface of the first substrate and in the active region; a second substrate facing the first surface of the first substrate, the second substrate being on the active element layer; and an antireflection member on a first surface of the second substrate that faces the first substrate, the antireflection member being spaced apart from the active element layer, wherein the antireflection member includes first, second, third, and fourth refractive layers sequentially stacked from the first surface of the second substrate, refractive indexes of the first and third refractive layers are greater than refractive indexes of the second and fourth refractive layers, and the fourth refractive layer includes aluminum, indium, and/or gallium.

Display device

A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Display device including an auxiliary layer

A resin composition according to an exemplary embodiment of the present disclosure includes a first polyol represented by Chemical Formula 1, a second polyol represented by Chemical Formula 2, and a polyisocyanate, wherein the first polyol and the second polyol have a linear structure without a side chain. each of Yto Yis H or OH—, at least one of Yand Yis OH—, at least one of Yand Yis OH—, each of Xto Xis independently a C-Calkyl group, the alkyl group includes or does not include an unsaturated bond, —CH— in the alkyl group may be substituted or unsubstituted with —CHOH—, and each of n and m is independently 1 to 200.

Resin composition and manufacturing method of coating layer using the same

A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Display device having insulating layer containing fluorine

Display device comprises a concentration of fluorine provides first peak in first area and second peak in third area contained in the semiconductor layer

Disclosed is an acrylic adhesive, including an acrylic polymer obtained by polymerizing a mixture of about 120 parts by weight to about 250 parts by weight of acrylic monomers with about 0.1 parts by weight to about 1 parts by weight of an azo initiator, about 0.5 parts by weight to about 1 parts by weight of a filler, about 1.5 parts by weight to about 2.5 parts by weight of a crosslinking agent, and about 0.5 parts by weight to 1 parts by weight of an anti-static agent.

Acrylic adhesive and protective film including the same

A transistor includes a gate electrode, a semiconductor layer overlapping the gate electrode, the semiconductor layer including an oxide semiconductor, and a source electrode and a drain electrode spaced apart from the source electrode, wherein the source and drain electrodes are connected to the semiconductor layer. The semiconductor layer includes a plurality of layers, wherein a crystallinity of a layer of the plurality of layers of the semiconductor layer is a ratio of a crystalline oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer, to an amorphous oxide semiconductor, included in the layer of the plurality of layers of the semiconductor layer. A first layer of the plurality of layers of the semiconductor layer has a different crystallinity with respect to a second layer of the plurality of layers of the semiconductor layer.

Transistor and display device having the same

Growing community of inventors

Yongin-si, South Korea

Soo Im Jeong