Samsung Electronics Co., Ltd.

Soo-Hyeong Kim

Hyun-Joong Kim

Dong Hee Kim

Ju-yun Jung

Young San Kang

Jong Kyu Choi

Gi-won Oh

Sung Oh Huh

A memory storage device that performs real-time monitoring is provided. The memory storage device comprises a memory controller, and a status indicating module/circuit, wherein the memory controller is configured to perform a first a second initialization operation, the first and second initialization operations performed in response to turning-on of the memory storage device, to generate a first status parameter regarding a status of the memory storage device in which the first initialization operation is performed, and to generate a second status parameter regarding the status of the memory storage device in which a second initialization operation is performed. The status indicating circuit includes a first transistor configured to operate on the basis of the first status parameter, a first resistor connected to the first transistor, a second transistor configured to operate on the basis of the second status parameter, and a second resistor connected to the second transistor.

Memory storage device, an operation method of the memory storage device, test method and electronic device

A semiconductor memory device includes a memory cell array including a plurality of cell cores which include a first cell core corresponding to a first channel that is a normal channel and a second cell core corresponding to a second channel that is a failed channel; and an access circuit configured to perform address remapping by converting a first address of at least a first failed cell in the first cell core into a second address of at least a second cell in the second cell core, and to transmit data of at least the second cell through the first channel.

Semiconductor memory device, memory system including the same, and method of operating the same

Growing community of inventors

Hwaseong-si, South Korea

Soo-Hyeong Kim