Skhynix Inc.

Hynix Semiconductor Inc.

Industry-university Cooperation Foundation Hanyang University

Kioxia Corporation

Seoul National University

Soo Gil Kim

Beom Yong Kim

Hae Chan Park

Nam Kyun Park

Hyun Jeong Lee

Myoung Sub Kim

Tae Jung Ha

Joon Seop Sim

Sung Cheoul Kim

Gap Sok Do

Young Seok Ko

Joo Young Moon

Tae Young Lee

Jeong Hwan Song

Guk Cheon Kim

Jong Koo Lim

Se Ho Lee

Ha Young Lee

Sung Woong Chung

Taiga Isoda

Tae Joo Park

Tae Jun Seok

Byung Joon Choi

Soo Man Seo

Hye Rim Kim

Won Ki Ju

Min Seok Moon

Hyun Seung Choi

Operating a selector device that controls access of a signal to a memory element may comprise applying a main operating voltage pulse and a refresh voltage pulse to the selector device. The refresh voltage pulse and main operating voltage pulse have opposite polarities. A magnitude of the main operating voltage pulse is greater than or equal to a threshold voltage for turning on the selector device, and a maximum magnitude of the refresh voltage pulse is less than the threshold voltage. The refresh voltage pulse reduces a difference between the threshold voltage and a turn-off voltage of the selector device, and may be applied immediately before or immediately after the main operating voltage pulse. An electronic circuit may include the selector device and a driving circuit for apply the pulses. A nonvolatile memory may include the driving circuit and a plurality of nonvolatile memory elements each including a selector device.

Method of operating selector device, method of operating nonvolatile memory apparatus using the same, electronic circuit device including selector device, and nonvolatile memory apparatus

Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.

Method of operating selector device, method of operating nonvolatile memory apparatus applying the same, electronic circuit device including selector device, and nonvolatile memory apparatus

An electronic device may include a semiconductor memory, and the semiconductor memory may include a multilayer synthetic anti-ferromagnetic (Multi SAF) structure including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the spacer layer may include n non-magnetic layers and n&#x2212;1 magnetic layers that are disposed such that each of the n non-magnetic layers and each of the n&#x2212;1 magnetic layers are alternately stacked, wherein n indicates an odd number equal to or greater than 3, wherein the n&#x2212;1 magnetic layers and n non-magnetic layers may be configured to effectuate an antiferromagnetic exchange coupling with at least one of the first ferromagnetic layer and the second ferromagnetic layer.

Electronic device

An electronic device may include a semiconductor memory, and the semiconductor memory may include a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and a thermal stability enhanced layer (TSEL) including a homogeneous material having an Fe&#x2014;O bond.

Electronic device including thermal stability enhanced layer including homogeneous material having Fe-O bond

A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a first sacrificial film over a target layer to be etched, forming a first partition mask over the first sacrificial film, forming a first sacrificial film pattern by etching the first sacrificial film using the first partition mask, forming a first spacer at a sidewall of the first sacrificial film pattern, and forming a first spacer pattern by removing the first sacrificial film pattern. The first partition mask includes a plurality of first line-shaped space patterns extending in a first direction. A width of at least one space pattern located at both edges from among the plurality of first space patterns is smaller than a width of each of other space patterns.

Method for manufacturing semiconductor device

A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same

In an embodiment, a substrate that includes a cell region and a dummy region is provided. Lower interconnection structures are formed in the cell region and the dummy region. One or more first multilayered structure patterns are formed in the cell region and one or more second multilayered structure patterns in the dummy region over the lower interconnection structures. The first multilayered structure patterns and second multilayered structure patterns extend in a first direction. Each of the second multilayered structure patterns includes an etch target layer. An insulating material layer is formed over the first multilayered structure patterns and the second multilayered structure patterns. An interlayer insulating layer that fills a space between two adjacent patterns of the first multilayered structure patterns and second multilayered structure patterns is formed by planarizing the insulating material layer. The etch target layer in each of the second multilayered structure patterns is removed.

Semiconductor device and method of manufacturing the same

A switching device includes a first switching element having a snap-back behavior characteristic, an output voltage of the first switching element decreasing when an input current increases from a turn-on threshold current of the first switching element. The switching device further includes a second switching element having a continuous-resistance behavior characteristic, an output voltage of the second switching element increasing when the input current increases from a turn-on threshold current of the second switching element. The turn-on threshold current of the first switching element is lower than the turn-on threshold current of the second switching element.

Switching device and non-volatile memory device including the same

A switching device includes a first electrode, a switching layer having a non-memory characteristic, and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. The second atom forms a trap site trapping a conductive carrier in the switching layer when a voltage having an absolute value that is smaller than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes. The second atom forms a moving path through which the conductive carrier moves between the first electrode and the second electrode when a voltage having an absolute value that is greater than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes.

Switching device, and resistive random access memory including the same as a selection device

A switching device includes a first electrode and a second electrode that are disposed over a substrate, and an electrolyte layer disposed between the first electrode and the second electrode and including a porous oxide. The switching device performs threshold switching operation on the basis of oxidation-reduction reactions of metal ions that are provided from the first electrode or the second electrode to the electrolyte layer.

Switching device, method of fabricating the same, and resistive random access memory including the switching device as a selection device

A switching device includes a first electrode, a switching layer and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. A valence of the first atom and a valence of the second atom are different from each other.

The present invention relates to a variable resistance memory device and a method for forming the same. A variable resistance memory device according to the present invention includes a first electrode; a second electrode spaced apart from the first electrode; a resistance variable layer and a metal-insulator transition layer provided between the first electrode and the second electrode; and a heat barrier layer provided (i) between the first electrode and the metal-insulator transition layer, (ii) between the metal-insulator transition layer and the resistance variable layer, or (iii) between the second electrode and the metal-insulator transition layer. The present invention prevents dissipation of heat generated in the metal-insulator transition layer using a thermal boundary resistance (TBR) phenomenon, and thus current and voltage to operate the variable resistance memory device can be reduced.

Variable resistance memory device

A semiconductor integrated circuit device, a method of manufacturing the same, and a method of driving the same are provided. The device includes a semiconductor substrate, an upper electrode extending from a surface of the semiconductor substrate; a plurality of switching structures extending from both sidewalls of the upper electrode in a direction parallel to the surface of the semiconductor substrate, and a phase-change material layer disposed between the plurality of switching structures and the upper electrode.

Growing community of inventors

Seongnam, South Korea

Soo Gil Kim