Micron Technology Incorporated

Other

Sony Varghese

Gurtej S Sandhu

John A Smythe

Scott L Light

Bret K Street

Shijian Luo

Wei Zhou

Jonathan S Hacker

Zhaohui Ma

Aibin Yu

Hyun Sik Kim

Jin Lu

Andrey V Zagrebelny

Siddartha Kondoju

Suresh Ramakrishnan

Kozaburo Sakai

Ahmed H Abdelnaby

Andrew Dennis Watson Carswell

Wayne Hai-Wei Huang

Some embodiments include a construction having a horizontally-extending layer of fluorocarbon material over a semiconductor construction. Some embodiments include methods of filling openings that extend into a semiconductor construction. The methods may include, for example, printing the material into the openings or pressing the material into the openings. The construction may be treated so that surfaces within the openings adhere the material provided within the openings while surfaces external of the openings do not adhere the material. In some embodiments, the surfaces external of the openings are treated to reduce adhesion of the material.

Methods of forming material within openings extending into a semiconductor construction, and semiconductor constructions having fluorocarbon material

Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.

Semiconductor constructions comprising dielectric material, and methods of forming dielectric fill within openings extending into semiconductor constructions

Semiconductor constructions having fluorocarbon material

Methods of forming semiconductor structures include providing a polymeric material over a carrier substrate, bonding another substrate to the polymeric material, and lowering a temperature of the polymeric material to below about 15&#xb0; C. to separate the another substrate from the carrier substrate. Some methods include forming a polymeric material over a first substrate, securing a second substrate to the first substrate over the polymeric material, cooling the polymeric material to a temperature below a glass transition temperature of the polymeric material, and separating the second substrate from the first substrate. Semiconductor structures may include a polymeric material over at least a portion of a first substrate, an adhesive material over the polymeric material, and a second substrate over the adhesive material. The polymeric material may have a glass transition temperature of about 10&#xb0; C. or lower and a melting point of about 100&#xb0; C. or greater.

Semiconductor structures comprising polymeric materials

Semiconductor constructions comprising dielectric material

Methods of making semiconductor device packages may involve attaching a first semiconductor die to a carrier wafer, an inactive surface of the first semiconductor die facing the carrier wafer. One or more additional semiconductor die may be stacked on the first semiconductor die on a side of the first semiconductor die opposite the carrier wafer to form a stack of semiconductor dice. A protective material may be positioned over the stack of semiconductor dice, a portion of the protective material extending along side surfaces of the first semiconductor die to a location proximate the inactive surface of the first semiconductor die. The carrier wafer may be detached from the first semiconductor die.

Methods of manufacturing multi-die semiconductor device packages and related assemblies

Methods for processing semiconductor devices

Apparatuses and methods for reducing the warp of semiconductor wafer stacks during manufacturing are disclosed. An engineered carrier wafer is disclosed. The engineered carrier wafer may be pre-stressed such that it exhibits a warp. The warp may be configured to counteract a warp of a device wafer included in the wafer stack. The overall warp of the wafer stack may be reduced.

Engineered carrier wafers

A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.

Method of forming a planar surface for a semiconductor device structure, and related methods of forming a semiconductor device structure

Growing community of inventors

Boise, ID, United States of America

Sony Varghese