Carl Zeiss Smt Gmbh

Sonja Schneider

Norbert Wabra

Boris Bittner

Ricarda Schoemer

Martin Von Hodenberg

Hendrik Wagner

Walter Pauls

Rumen Iliew

Toralf Gruner

Holger Schmidt

Johannes Ruoff

Christian Wald

Daniel Golde

Stephan Andre

Ricarda Schneider

Jens Kugler

Bernhard Gellrich

Rolf Freimann

Aksel Goehnermeier

Guenter Rudolph

Ulrich Loering

Thomas Schicketanz

Franz-Josef Stickel

Johannes Zellner

Johann Trenkler

Steffen Fritzsche

Bryce Anton Moffat

Olaf Rogalsky

Matthias Roesch

Gerd Reisinger

Alexander Gratzke

Stefan Kraus

Stefan Rist

Gordon Doering

Florian Ahles

Reimar Finken

Ruediger Mack

Peter Graf

Judith Fingerhuth

Arne Schob

Ferdinand Djuric-Rissner

A projection exposure apparatus for semiconductor technology includes an optical arrangement with an optical element having an optically effective surface. The optical arrangement also includes an actuator embedded in the optical element. The actuator is outside the optically effective surface and outside the region located behind the optically effective surface. The optical arrangement is set up to deform the optically effective surface.

Projection exposure system for semiconductor lithography having an optical arrangement

The disclosure relates to an optical element, including: a substrate, a first coating, which is disposed on a first side of the substrate and is configured for reflecting radiation having a used wavelength (&#x3bb;) in the EUV wavelength range, and a second coating, which is disposed on a second side of the substrate, for influencing heating radiation that is incident on the second side of the substrate. The disclosure also relates to an optical arrangement having at least one such optical element.

Optical element having a coating for influencing heating radiation and optical arrangement

An imaging optical system, in particular a projection objective, for microlithography, includes optical elements to guide electromagnetic radiation with a wavelength in a path to image an object field into an image plane. The imaging optical system includes a pupil, having coordinates (p, q), which, together with the image field, having coordinates (x, y) of the optical system, spans an extended 4-dimensional pupil space, having coordinates (x, y, p, q), as a function of which a wavefront W(x, y, p, q) of the radiation passing through the optical system is defined. The wavefront W can therefore be defined in the pupil plane as a function of an extended 4-dimensional pupil space spanned by the image field (x, y) and the pupil (p, q) as W(x, y, p, q)=W(t), with t=(x, y, p, q).

Imaging optical system for microlithography

A projection lens is disclosed for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength &#x3bb; from the extreme ultraviolet range. The projection lens includes a multiplicity of mirrors having mirror surfaces arranged in a projection beam path between the object plane and the image plane so that a pattern of a mask in the object plane is imagable into the image plane via the mirrors. A first imaging scale in a first direction running parallel to a scan direction is smaller in terms of absolute value than a second imaging scale in a second direction perpendicular to the first direction. The projection lens also includes a dynamic wavefront manipulation system for correcting astigmatic wavefront aberration portions caused by reticle displacement.

Projection lens, projection exposure apparatus and projection exposure method for EUV microlithography

A projection lens images a pattern of a mask arranged in the region of an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation with a work wavelength &#x3bb;&#x3c;260 nm. The projection lens has a multiplicity of optical elements with optical surfaces. The projection lens also has a wavefront manipulation system for controllable influencing of the wavefront of the projection radiation travelling from the object plane to the image plane. The wavefront manipulation system has a manipulator having a manipulator element and an actuating device or reversibly changing an optical effect of the manipulator element on radiation of the projection beam path.

Projection lens with wave front manipulator and related method and apparatus

A method of operating a microlithographic projection exposure apparatus includes, in a first step, providing a projection objective that includes a plurality of real manipulators. In a second step, a virtual manipulator is defined that is configured to produce preliminary control signals for at least two of the real manipulators. In a third step, performed during operation of the apparatus, a real image error of the projection objective is determined. In a fourth step, a desired corrective effect is determined. In a fifth step, first virtual control signals for the virtual manipulator are determined. In a sixth step, second virtual control signals for the real manipulators are determined.

Method of operating a microlithographic projection apparatus

A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n=(1&#x2212;&#x3b4;)+i&#xdf;, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n=(1&#x2212;&#x3b4;)+i&#xdf;, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation &#x3b4;of the real part of the first refractive index from 1 is large relative to the absorption coefficient &#xdf;of the first layer material and the deviation &#x3b4;of the real part of the second refractive index from 1 is small relative to the absorption coefficient &#xdf;of the second layer material.

Projection lens for EUV microlithography, film element and method for producing a projection lens comprising a film element

An optical assembly, in particular for a lithography system for imaging lithographic micro- or nanostructures, includes at least two optical elements arranged successively in a beam path of the optical assembly, an acquisition device designed to acquire radiation signals from marking elements on or at the at least two optical elements, and a control device coupled to the acquisition device and which is designed to determine the plurality of properties of the optically active surface of the at least two optical elements as a function of the information contained in the radiation signals originating from the marking elements. The disclosure also relates to a method for operating the optical assembly.

Optical assembly

A microlithographic projection exposure apparatus includes: a projection lens for imaging mask structures via an exposure radiation including at least one optical element and at least one manipulator; a read-in device for reading in application-specific structure information defining at least one property of an angular distribution of the exposure radiation upon entering the projection lens; and a travel establishing device for establishing a travel command defining a change to be made in an optical effect of the at least one optical element by manipulation of a property of the optical element via the at least one manipulator along a travel. The travel establishing device is configured to establish the travel command in an at least two-stage optimization.

Projection exposure apparatus including at least one mirror

Aberrations of a projection lens for microlithography can be subdivided into two classes: a first class of aberrations, which are distinguished by virtue of the fact that their future size increases by a non-negligible value after a constant time duration, independently of their current size, and a second class of aberrations, which, after reaching a threshold, only increase by a negligible value after each further time duration. An adjustment method is proposed, which adjusts these two classes of aberrations in parallel in time with one another.

System correction from long timescales

A projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern includes providing the pattern between an illumination system and a projection lens of a projection exposure apparatus so that the pattern is arranged in the region of an object plane of the projection lens and can be imaged via the projection lens into an image plane of the projection lens. The image plane is optically conjugate with respect to the object plane, and imaging-relevant properties of the pattern can be characterized by pattern data. The method also includes illuminating an illumination region of the pattern with an illumination radiation provided by the illumination system in accordance with an illumination setting which is specific to a use case and which can be characterized by illumination setting data.

Projection exposure method and projection exposure apparatus for microlithography

A mirror arrangement for an EUV projection exposure apparatus for microlithography comprises a plurality of mirrors each having a layer which is reflective in the EUV spectral range and to which EUV radiation can be applied, and having a main body. In this case, at least one mirror of the plurality of mirrors has at least one layer comprising a material having a negative coefficient of thermal expansion. Moreover, a method for operating the mirror arrangement and a projection exposure apparatus are described. At least one heat source is arranged, in order to locally apply heat in a targeted manner to the at least one layer having a negative coefficient of thermal expansion of the at least one mirror.

Mirror arrangement for an EUV projection exposure apparatus, method for operating the same, and EUV projection exposure apparatus

A reflective optical element for a microlithographic projection exposure apparatus, a mask inspection apparatus or the like. The reflective optical element has an optically effective surface, an element substrate (), a reflection layer system () and at least one deformation reduction layer (). When the optically effective surface () is irradiated with electromagnetic radiation, a maximum deformation level of the reflection layer system is reduced in comparison with a deformation level of an analogously constructed reflective optical element without the deformation reduction layer.

Reflective optical element

Growing community of inventors

Auburn Hills, MI, United States of America

Sonja Schneider