Infineon Technologies Austria Ag

Sonja Krumrey, Legal Representative

Martin Poelzl

Oliver Haeberlen

Walter Rieger

Martin Henning Vielemeyer

Joachim Krumrey

Lutz Goergens

Milko Paolucci

Johannes Schoiswohl

One aspect is monolithic semiconductor switches and method for manufacturing. One embodiment provides a semiconductor die with a first n-type channel FET and a second n-type channel FET. A source of the first n-type channel FET and a drain of the second n-type channel FET are electrically coupled to at least one contact area at a first side of the semiconductor die, respectively. A drain of the first n-type channel FET, a gate of the first n-type channel FET, a source of the second n-type channel FET and the gate of the second n-type channel FET are electrically coupled to contact areas at a second side of the semiconductor die opposite to the first side, respectively. The contact areas of the drain of the first n-type channel FET, of the gate of the first n-type channel FET, of the source of the second n-type channel FET and of the gate of the second n-type channel FET are electrically separated from each other, respectively.

Monolithic semiconductor switches and method for manufacturing

Growing community of inventors

Goedersdorf, Austria

Sonja Krumrey, Legal Representative