Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Wuhan China Star Optoelectronics Technology Co., Ltd.

Semiconductor Display Technology Co., Ltd.

Wuhan China Star Optoelectronics

Songshan Li

Lei Yu

Wu Ding

Zhaosong Liu

Quan Hu

Xiaoxing Zhang

Yuan Jun Hsu

Yuan-jun Hsu

Bufang Zhang

Disclosed is a light emitting panel and a display device. The light emitting panel includes a substrate, wherein the substrate comprises a display area, a non-display area and a bending area connecting the display area and the non-display area; a transistor layer, wherein the transistor layer is disposed on the substrate and disposed relative to the display area and the non-display area; an organic layer, wherein the organic layer is disposed on the substrate and disposed relative to the bending area; and a wiring layer, wherein the wiring layer is disposed on the organic layer; wherein a vertical height of the organic layer is greater than a vertical height of the transistor layer.

Light emitting panel and display device

A display panel and a display device are provided. The display panel has a display area and a fan-out area. The fan-out area and the display area at least partially overlap. By arranging at least one part of the fan-out area in the display area, the display area of the display panel expends to the fan-out area, and therefore the area of the display area of the display panel is increased to reduce the area of the non-display area occupied by the fan-out area. That is, the problem that the non-display area of the display panel is too large is alleviated and the narrow border and full screen technology are further implemented.

Display panel and display device

Provided is a display panel including a substrate layer, an active layer, a first insulating layer, a first metal layer, a second insulating layer, and a second metal layer that are stacked. The second metal layer located in a display area of the display panel comprises a first portion and a second portion, and the second metal layer located in a non-display area of the display panel comprises a third portion, wherein a thickness of the first portion of the second metal layer is less than thicknesses of the second portion and the third portion of the second metal layer.

Display panel and fabrication method thereof

An array substrate and a manufacturing method thereof are provided. The array substrate includes a flexible substrate, a plurality of thin film transistors, a plurality of replacement units, an organic filling layer, a source and drain layer, a planarization layer, an anode layer, and a pixel definition layer. The organic filling layer is made of a flexible material which has good bendability. Thus, a risk of breakage or crack during a bending process is reduced, thereby realizing a dynamic folding of the array substrate.

Array substrate and manufacturing method thereof

The invention provides a manufacturing method for flexible display panel, comprising providing an array substrate, the array substrate comprising a semiconductor layer, dividing the flexible display panel into a pixel area and a bending area, adjacent to each other, the pixel area comprising the semiconductor layer; disposing a second groove in the bending area, and the second groove forming a step structure in the array substrate, the step structure extending from inside of the array substrate towards direction opposite to inner wall of the second groove; filling the second groove with an organic material, and the organic material filling the second groove forming a concave tapered groove with flat surface of the array substrate; fabricating a source, a drain, and source/drain wiring on the array substrate, the source and the drain being connected to the semiconductor layer, the source/drain wiring covering the tapered groove.

Manufacturing method for flexible display panel and flexible display panel comprising concave tapered organic layer

An organic light emitting diode (OLED) display panel and manufacturing method thereof are provided. The display panel includes a substrate, a thin film transistor layer, and a light emitting structure, wherein the thin film transistor layer includes a polysilicon layer, a gate dielectric layer positioned on the polysilicon layer, a gate metal layer positioned on the gate dielectric layer, a gate buffer layer positioned on the gate dielectric layer, and an interlayer dielectric layer covering the gate dielectric layer, the gate metal layer, and the gate buffer layer.

Organic light emitting diode display panel and manufacturing method thereof

The present disclosure relates to an array substrate, manufacturing method thereof and display device using the same. The method for manufacturing the array substrate includes: forming an amorphous silicon layer and an insulating layer covering the amorphous silicon layer in one deposition process; and processing the amorphous silicon layer to transform the amorphous silicon layer into a polysilicon layer. Through the above-mentioned method, the present disclosure can solve the problem of affecting the concentration of current carriers that caused by the oxidation of the surface of polysilicon, and improve the performance of the array substrate.

Array substrate, manufacturing method thereof and display device using the same

The present disclosure relates to a thin film transistor (TFT) substrate, a manufacturing method thereof, and an organic light-emitting (OLED) substrate. The interlayer dielectric layer manufactured by the manufacturing method may be configured in the structure of two silicon oxide layers sandwiching one silicon nitride layer. As such, the bonding force between the interlayer dielectric layer and the gate, and the bonding force between the interlayer dielectric layer, and the source and the drain may be improved. The source and the drain may be prevented from falling off from the interlayer dielectric layer during the annealing process. Production yield of the TFT substrate may be improved. The OLED substrate adopting the manufactured of the OLED substrate of the present disclosure may have a better production yield and quality.

Thin film transistor (TFT) substrate, manufacturing method thereof, and organic light-emitting diode (OLED) substrate

The present disclosure provides an organic light emitting diode (OLED) display panel and a method for manufacturing same. The OLED display panel includes a substrate, a thermal insulating layer, a buffer, a driving TFT, and a storage capacitor. The substrate includes an arrangement area. The thermal insulating layer is disposed in the arrangement area. The buffer layer is disposed on the substrate. Both the driving TFT and the storage capacitor are disposed on the buffer layer to correspond to the arrangement area. According to the present disclosure, the thermal insulating layer prevents heat in the amorphous silicon layer from dissipating rapidly when an annealing treatment is performed for the amorphous silicon layer to have amorphous silicon crystallize.

OLED display panel and method for manufacturing same

Disclosed is a method for manufacturing a thin film transistor, and a thin film transistor, relating to the technical field of liquid crystal display. The method comprises steps of: forming a buffer layer, an active layer, a gate insulator layer, and a gate electrode layer successively on a glass substrate and patterning these layers; forming an inter-layer dielectric layer on the buffer layer, the active layer, and the gate electrode layer and patterning the inter-layer dielectric layer; forming a source and a drain on the inter-layer dielectric layer, enabling the source and the drain to come into contact with the active layer, and patterning the source and the drain; forming a passivation layer and an organic photoresist layer successively on the inter-layer dielectric layer, the source, and the drain, and patterning the organic photoresist layer; dry-etching the passivation layer by using the organic photoresist layer as a mask, so as to form a hole on the passivation layer; and forming an organic light-emitting device by means of the hole on the passivation layer. The method saves a mask, requires simple techniques, and saves manufacturing costs. Besides, the developer is not able to come into direct contact with exposed aluminum of the source and the drain resulted from etching of the passivation layer. The method thus achieves the aim of improving product characteristics.

Method for manufacturing thin film transistor, and thin film transistor, including forming an organic light-emitting device

An AMOLED panel is disclosed. The panel includes, from bottom up in sequence, a substrate, a first electrode layer, an opaque insulation layer, and pixel defined layers among which pixel regions are arranged. The opaque insulation layer extends to the pixel region in which an organic light emitting layer is arranged. The organic light emitting layer has a film thickness non-uniform region at a position near to an inclined surface of a pixel defined layer facing the pixel region. When observed along a normal line direction of the substrate, a projection of the film thickness non-uniform region on the opaque insulation layer is inside the opaque insulation layer. In the panel, the non-uniform light resulted by the film thickness non-uniform region can be completely shaded by the opaque insulation layer. In this manner, only light with a uniform brightness that is emitted by a film thickness uniform region can transmit through the substrate, and thus the pixel region can have a uniform brightness. Therefore, brightness uniformity of the panel can be improved. A method for manufacturing the panel is further disclosed. A performance of the panel can be ensured, and a product quality can be improved.

AMOLED panel and method for manufacturing the same

A flexible AMOLED substrate and a manufacturing method thereof are provided. The method includes: forming a flexible backing, which includes a display section and a bending section disposed on an outer circumference of the display section; forming a buffer layer on the flexible backing, removing a portion of the buffer layer that is disposed on the bending section and preserving a portion of the buffer layer that is disposed on the display section so that an inorganic insulation layer on the bending section has a reduced thickness to improve bending resistance of the bending section of the flexible AMOLED substrate and thus improving production yield. The flexible AMOLED substrate is manufactured with the above method, in which an inorganic insulation layer included in a bending section has a reduced thickness so that the bending section of the flexible AMOLED substrate shows better resistance against bending and provides high production yield.

Flexible AMOLED substrate and manufacturing method thereof

A method for manufacturing an IGZO thin-film transistor includes: manufacturing a buffer layer, an active layer, a gate electrode layer, and a gate insulator layer in sequence on a substrate, and performing a patterning process; depositing a transparent insulating metal oxide layer on the patterned buffer layer, the active layer, the gate electrode layer, and the gate insulator layer by sputtering, and annealing the transparent insulating metal oxide layer so as to improve electric properties of a thin-film transistor; depositing a dielectric layer on the transparent insulating metal oxide layer, and patterning the dielectric layer and the transparent insulating metal oxide layer by means of a photolithography process and a dry etch process; depositing S/D (source/drain) contact regions on the dielectric layer; and performing a patterning process.

Method for manufacturing IGZO thin-film transistor

Related to is the field of light-emitting panel manufacture, and a light-emitting panel and a method for manufacturing the same are provided, which aim to improve uniformity of light emission of an Organic Light-Emitting Diode (OLED) manufactured by Inkjet Printing (IJP). The light-emitting panel sequentially comprises an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. The method comprises forming a multilayer structure sequentially including an ITO substrate, a light-emitting layer, a light-shielding layer, and a cover glass. According to a size of an edge warp of a light-emitting area of the OLED, a light-shielding layer is designed at a corresponding position of the light-emitting area on the cover glass, and a position of a non-uniform edge is subjected to light-shielding processing, so that the problem of non-uniform light emission caused by the edge warp of the organic light-emitting layer is solved. A display part can thus be uniformly showed, thereby effectively improving the uniformity of light emission of the OLED manufactured by IJP.

Light-emitting panel capable of emitting uniform light and method for manufacturing the same

An array substrate is provided, including a substrate, a driver thin film transistor and a switch thin film transistor disposed on the substrate, the driver thin film transistor and the switch thin film transistor both include a gate, a gate insulating layer, an active layer, a source, and a drain. A barrier layer is disposed between the gate and the gate insulating layer of the driver thin film transistor. A manufacturing method thereof includes forming a barrier layer on the gate of the driver thin film transistor. Compared with existing arts, forming a barrier layer between the gate and the gate insulating layer of the driver thin film transistor to prevent its active layer from water and active oxygen ions affections can improve the electrical property and reliability of the thin film transistor, and ensure the normal operation for driving the driver thin film transistor of organic light emitting diode.

Growing community of inventors

Hubei, China

Songshan Li