Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Songse Yi

Hyunwoo Kim

Juhyeon Park

Sumin Kim

Hyunji Song

JinJoo Kim

Yechan Kim

Naery Yu

Min-Soo Kim

Sung-Min Kim

Young-Min Kim

Sung-Hwan Kim

Juyoung Kim

Hyun-Ji Song

Yun-Jun Kim

Chung-Heon Lee

Yong-Woon Yoon

Jungsik Choi

Hea-Jung Kim

Seung-Hee Hong

Youn-Hee Nam

Ju-Young Kim

Su Min Kim

Sukkoo Hong

Seulgi Jeong

Sun-Hae Kang

Jae-Yeol Baek

Byeri Yoon

Suk Koo Hong

Boodeuk Kim

Yeon-Hee Jo

Myeong Koo Kim

Sun-Min Hwang

Won-Jong Hwang

MyeongKoo Kim

Jeongho Mun

Ahreum Choi

A resist composition including a polymer; and a compound represented by Formula 1,  

Resist composition

A photo-decomposable compound, a photoresist composition, and a method of manufacturing an IC device, the compound generating acid upon exposure and acts as a quenching base that neutralizes acid in an unexposed state and being represented by Formula 1: 

Photo-decomposable compound, photoresist composition including the same, and method of manufacturing integrated circuit device

A semiconductor device manufacturing method includes forming a gate dielectric layer surrounding first semiconductor patterns and second semiconductor patterns; forming a first organic pattern covering the second semiconductor patterns; forming a sacrificial pattern interposed between the first semiconductor patterns and exposing both side surfaces of the first semiconductor patterns, and a conductive pattern surrounding the second semiconductor patterns and disposed between the first organic pattern and the second semiconductor patterns; forming a second organic pattern covering the first semiconductor patterns, the gate dielectric layer, the sacrificial pattern, and the first organic pattern; and forming a cross-linking layer interposed between the first organic material pattern and the second organic material pattern.

Method of manufacturing a semiconductor device including a plurality of channel patterns

A method of producing a layer structure includes forming a first organic layer by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer through a curing process.

Method of producing layer structure, layer structure, and method of forming patterns

The present inventive concepts relate to a polymer for a hard mask, a hard mask composition including a polymer for a hard mask as described herein, and a method for forming a pattern of a semiconductor device using a hard mask composition as described herein. The polymer includes a structure represented by the following chemical formula 1.  In chemical formula 1, 'A', 'Q', &#x201c;L&#x201d;, &#x201c;R&#x201d;, &#x201c;R&#x201d;, &#x201c;R&#x201d;, and &#x201c;n&#x201d; are the same as defined in the specification.

Polymers for hard masks, hard mask compositions including the same, and methods for forming a pattern of a semiconductor device using a hard mask composition

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Seoul, South Korea

Songse Yi