Changxin Memory Technologies, Inc.

Songmei Shen

Junyi Zhang

A method for manufacturing a semiconductor structure includes the following operations. A support layer and a first dielectric layer that are stacked are formed on the substrate, in which first trenches are formed in the support layer and the first dielectric layer. A first blocking layer covering sidewalls and bottoms of the first trenches and a top surface of the first dielectric layer is formed. The first blocking layer and the first dielectric layer are etched to form etching holes. The first dielectric layer exposed by the etching holes is removed to form cavities. A second blocking layer is formed, which seals the etching holes at the tops of the cavity. Part of the first blocking layer in the first trenches is removed so that the first trenches expose the substrate. Wires are formed in the first trenches.

Semiconductor structure and method for manufacturing same

A semiconductor structure and a method for preparing a semiconductor structure are provided. The method for preparing the semiconductor structure includes operations as follows. A substrate is provided, and a plurality of gate structures are arranged at intervals on the substrate. A sacrificial sidewall with a preset thickness is formed on a sidewall of the gate structure. A first dielectric layer is formed between adjacent sacrificial sidewalls, a top of the first dielectric layer being flush with a top of the gate structure and a top of the sacrificial sidewalls. The sacrificial sidewall is removed and an air gap structure is formed on the sidewall of the gate structure. A second dielectric layer is formed, the second dielectric layer covering the top of the gate structure, a top opening of the air gap structure and the top of the first dielectric layer.

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Hefei, China

Songmei Shen