Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Songbaek Choe

Toshiya Yokogawa

Shuichi Nagai

Akira Inoue

Atsushi Yamada

Osamu Tabata

Asamira Suzuki

Shunji Yoshida

A signal transmission apparatus includes: a first lead frame; a second lead frame spaced from the first lead frame; a primary semiconductor chip electrically connected to the first lead frame; a secondary semiconductor chip electrically connected to the second lead frame; and a signal isolator through which a signal is isolatedly transmitted from the primary semiconductor chip to the secondary semiconductor chip, the signal isolator having a first main surface that is bonded to both the first lead frame and the second lead frame.

Signal transmission apparatus including semiconductor chips and signal isolator

A signal transmission device comprises: a first lead frame having a first major surface and a second major surface opposite to the first major surface; a second lead frame having a third major surface and a fourth major surface and isolated from the first lead frame, the fourth major surface located opposite to the third major surface; a transmission circuit that sends a transmission signal, the transmission circuit located on the first major surface of the first lead frame; a receiving circuit located on the third major surface of the second lead frame; and an electromagnetic resonance coupler located across between the second major surface of the first lead frame and the fourth major surface of the second lead frame to transmit the transmission signal, sent by the transmission circuit, to the receiving circuit in a contactless manner.

Signal transmission device using electromagnetic resonance coupler

A nitride semiconductor structure includes a nitride semiconductor layer having a principal plane and including a nitride semiconductor. The normal to the principal plane of the nitride semiconductor layer is inclined at 5 degrees or more and 17 degrees or less with respect to the [11-22] axis of the nitride semiconductor constituting the nitride semiconductor layer in the direction of the +c-axis of the nitride semiconductor. The nitride semiconductor structure may further include a substrate having a principal plane which supports the nitride semiconductor layer on the principal plane. The substrate may include any one selected from the group consisting of a nitride semiconductor, sapphire, and Si.

Nitride semiconductor structure, electronic device including the nitride semiconductor structure, light-emitting device including the nitride semiconductor structure, and method for producing the nitride semiconductor structure

A nitride semiconductor device according to one embodiment of the present disclosure includes: a substrate; a first nitride semiconductor layer supported by the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer; a source-side nitride semiconductor regrowth layer which is located on a source-side recess region; a drain-side nitride semiconductor regrowth layer which is located on a drain-side recess region located apart from the source-side recess region; a first diffusion layer which is disposed in the first nitride semiconductor layer and contains Ge diffused from the source-side nitride semiconductor regrowth layer; and a second diffusion layer which is disposed in the first nitride semiconductor layer and contains Ge diffused from the drain-side nitride semiconductor regrowth layer.

Nitride semiconductor device comprising nitride semiconductor regrowth layer

A nitride semiconductor structure includes: a plurality of crystal growth seed regions formed of a nitride semiconductor, of which the principal surface is an m-plane and which extends to a range that defines an angle of not less than 0 degrees and not more than 10 degrees with respect to an a-axis; and a laterally grown region formed of a nitride semiconductor which has extended in a c-axis direction from each of the plurality of crystal growth seed regions. An S width that is the spacing between adjacent ones of the plurality of crystal growth seed regions is at least 20 &#x3bc;m.

Nitride semiconductor structure, multilayer structure, and nitride semiconductor light-emitting element

A structure for growth of a nitride semiconductor layer which is disclosed in this application includes: a sapphire substrate of which growing plane is an m-plane; and a plurality of ridge-shaped nitride semiconductor layers provided on the growing plane of the sapphire substrate, wherein a bottom surface of a recessed portion provided between respective ones of the plurality of ridge-shaped nitride semiconductor layers is the m-plane of the sapphire substrate, the growing plane of the plurality of ridge-shaped nitride semiconductor layers is an m-plane, and an absolute value of an angle between an extending direction of the plurality of ridge-shaped nitride semiconductor layers and a c-axis of the sapphire substrate is not less than 0&#xb0; and not more than 35&#xb0;.

Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same

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Osaka, Japan

Songbaek Choe