Samsung Electronics Co., Ltd.

Other

Samsung Display Co., Ltd.

Ak Chemtech Co., Ltd.

Kim, Seung Yun

Song Yi Kim

Junghyun Cho

Seung Yun Kim

Jin T Kim

Keun Chan Oh

Su Jin Kim

Daewon Ha

Hyeok Jin Lee

Min Ki Nam

Byung Jo Kim

Sung Woon Kim

Soo Dong Kim

Sun Young Kwon

Kyoung Won Park

Myung Jin Lee

Yong Seok Choi

Won Gap Yoon

Ki Ho Park

Young Soo Kwon

Tae Young Song

Jihyung Yu

Da Hye Park

Min Seok Kim

Ki Heon Lee

Woo Man Ji

Bu Yong Kim

Ju Ha Park

Ho Yeon Ji

Hye Jin Paek

Dong Gyu Baeck

Ji Hye Bae

Hyon Pil Yu

Jin Tai Kim

A variable resistance memory device includes a memory cell structure on a substrate, the memory cell structure including conductive layers, each of the conductive layers including conductive lines spaced apart from each other in a direction parallel to a top surface of the substrate, and memory cell arrays alternatingly stacked with the conductive layers in a first direction perpendicular to a top surface of the substrate, a first peripheral circuit layer between the substrate and the memory cell structure, the first peripheral circuit layer including first transistors, and a second peripheral circuit layer between the first peripheral circuit layer and the memory cell structure, the second peripheral circuit layer including second transistors, and the second transistors including core transistors that are connected to corresponding ones of the conductive lines.

Variable resistance memory device

A display device includes: a substrate including a first emission area, a second emission area, and a third emission area; a first wavelength conversion pattern overlapping the first emission area; a second wavelength conversion pattern overlapping the second emission area; and a light-transmitting pattern overlapping the third emission area, wherein the first wavelength conversion pattern includes first wavelength shifters configured to convert a first light into a second light, and first scatterers, the second wavelength conversion pattern includes second wavelength shifters configured to convert the first light into a third light, and second scatterers, and a ratio between a concentration of the first wavelength shifters and a concentration of the second wavelength shifters is 1:1.1 to 1:1.3.

Substrate including light emitting elements and display device including the same

A semiconductor memory device includes: first conductive lines provided on a substrate and extending in a first direction in parallel, each of the first conductive lines including a first end portion and a second end portion that are opposite to each other, the first direction being parallel to a top surface of the substrate; first selection transistors respectively connected to the first end portions of the first conductive lines; and second selection transistors respectively connected to the second end portions of the first conductive lines. Each of the first selection transistors may have a first gate width. Each of the second selection transistors may have a second gate width smaller than the first gate width.

Semiconductor memory device

Provided is a fire extinguisher which reduces a risk of a discharge accident caused when a stopper is unintentionally separated at a normal time and from which a handle is easily pulled out when fire occurs. According to the fire extinguisher, a force pressing an upper handle is not transmitted to a valve stem as a gap between the upper handle and a plug is maintained by a gap support part when the stopper is installed on the handle, and the force pressing an upper handle is transmitted to the valve stem through a valve pressing part as the gap support part horizontally moves by an elastic member so as not to overlap the plug when the stopper is separated from the handle.

Fire extinguisher with easy management and usage

A semiconductor memory device including a device isolation layer in a substrate to define first and second active portions, a first contact on the substrate, first and second memory cells spaced apart from the first contact in a first direction by first and second distances, respectively, first and second conductive lines connected to the first and second memory cells, respectively, and extending in a second direction, and first and second selection transistors respectively connected to the first and second conductive lines. A length of a bottom surface of a first gate electrode of the first selection transistor overlapping the first active portion in a third direction may be different from a length of a bottom surface of a second gate electrode of the second selection transistor overlapping the second active portion in the third direction.

Semiconductor memory device with selection transistors with substrate penetrating gates

A semiconductor device includes a substrate and memory cell arrays arranged on the substrate in a first direction and second direction. The first direction and second direction are parallel to a top surface of the substrate and intersect each other. The memory cell arrays include a plurality of memory cells. A cell dummy pattern on the substrate is arranged between the memory cell arrays in at least one of the first direction and second direction and extends along a side of the memory cell arrays. A cell conductive pattern is included on the substrate. A cell contact plug is configured to connect the cell dummy pattern and the cell conductive pattern. The cell contact plug is arranged between the cell dummy pattern and the cell conductive pattern in a third direction that is perpendicular to the first direction and the second direction.

Metal-insulator-metal (MIM) capacitor and semiconductor device

The present invention relates to a method for preparing a glutamate-based surfactant. More specifically, the present invention provides a method for preparing a glutamate-based surfactant, the method being very economical and being capable of mass production of the glutamate-based surfactant.

Method for preparing glutamate-based surfactant

Provided are a branch tee for sprinkler pipes, which is capable of selectively sprinkling fire extinguishing water only on a fire occurrence area and preventing the skipping effect although there are many obstacles to sprinkling water or a distance between sprinkler heads is narrow, and a sprinkler pipe system including the branch tee. The branch tee for sprinkler pipes includes a branch tee body () having a cylindrical shape, a first outlet () disposed on one end of the branch tee body () and connected to a pipe of a closed sprinkler head, an inlet () disposed on the branch tee body () and connected to a water supply pipe, a second outlet () disposed on the branch tee body () and connected to a pipe of an open sprinkler head, a piston valve disposed in the branch tee body () and simultaneously controlling opening and closing of each of the first outlet () and the second outlet () while moving in a longitudinal direction of the branch tee body () due to a fluid pressure difference in the branch tee body () when fire occurs, and an inner wall groove () defined in an inner wall of the branch tee body () between the piston valve and the first outlet ().

Branch tee for sprinkler pipes controlling water stream automatically and sprinkler pipe system having the same

Provided is an automatic fire extinguisher providing a simplified operation method for easily pulling out a safety pin while a handle is strongly grasped and allowing a spray hose to automatically aim a flame, and, furthermore, which is easily recognizable even from a distance when the safety pin is separated at normal times. The automatic fire extinguisher includes a main body vessel () in which a fire extinguishing agent is filled, a lower handle () coupled to a plug () disposed on an upper portion of the main body vessel (), and an upper handle () coupled to the lower handle () through a first hinge shaft ().

Automatic fire extinguisher providing user convenience

According to an exemplary embodiment of the present inventive concept, a method of manufacturing a color conversion display panel includes forming a plurality of light blocking members on a substrate to partition a first region, a second region, and a third region. A blue light blocking filter is formed on the substrate of both the first region and the second region. A color conversion layer including quantum dots is formed on the blue light blocking filter. A transmissive layer is formed on the substrate of the third region. Water vapor is supplied to the color conversion layer, and a barrier layer is formed on the color conversion layer and the transmissive layer.

Method of manufacturing a color conversion display panel and method of manufacturing a display device including the same

An integrated circuit device may include a semiconductor substrate including an active region and a transistor in the active region. The transistor may include first and second spaced apart source/drain regions in the active region of the semiconductor substrate, and a semiconductor channel region between the first and second source/drain regions. The semiconductor channel region may include a plurality of channel trenches therein between the first and second source/drain regions. A gate insulating layer may be provided on the channel region including sidewalls of the plurality of channel trenches, and a gate electrode may be provided on the gate insulating layer so that the gate insulating layer is between the gate electrode and the semiconductor channel region including the plurality of channel trenches. Related methods are also discussed.

Integrated circuit semiconductor devices including channel trenches and related methods of manufacturing

Growing community of inventors

Seoul, South Korea

Song Yi Kim