Samsung Electronics Co., Ltd.

Song-ho Yoon

Jin-kyu Kim

Ji-hyun In

Min-young Kim

Jang-hwan Kim

Bum-soo Kim

Tae-sun Chung

Kwang-yoon Lee

Ji-Hyun In

An memory device including a data region storing a main data, a first index region storing a count data, and a second index region storing an inverted count data, where the data region, the first index region, and the second index region are included in one logical address.

Apparatus and method for processing data of flash memory

Provided are an apparatus and method for processing data of flash memory. The apparatus includes a user requesting unit to request a data operation using a predetermined logical address, a transformation unit to transform the logical address into a physical address, and a control unit to record count data counting the number of predetermined bits of data, in an index region to indicate whether the data is valid when conducting the data operation.

A data processing apparatus and method for a flash memory, which make it easy to determine whether data stored in the flash memory is valid, are provided. The data processing apparatus includes a user request unit which issues a request for performing a data operation on a flash memory using a predetermined logical address, a conversion unit which converts the logical address into a physical address, and a control unit which performs the data operation on the physical address and writes inverted data obtained by inverting error correction code (ECC) corresponding to data used in the data operation to a region indicating whether the ECC is erroneous.

Data processing apparatus and method for flash memory

A data processing apparatus and method are provided for a flash memory, wherein the data processing apparatus and method can easily determine whether data stored in the flash memory is valid. The data processing apparatus for a flash memory includes a user request unit which issues a request for performing a data operation on a predetermined logical address, a conversion unit which converts the predetermined logical address into a physical address, and a control unit which performs the data operation on the physical address and records inverted data of data written to the predetermined logical address in an index area to indicate whether the data written to the predetermined logical address is valid.

Apparatus and method for detecting data validity in flash memory

A nonvolatile memory device and method for storing status information using multiple strings are provided. The nonvolatile memory device and method allow the status information to be stored using multiple strings. The nonvolatile memory includes a cell capable of storing at least one bit of data, a plurality of strings in each of which at least two cells are connected in series, and a plurality of pages each of which includes a plurality of cells, wherein the strings comprise a main string group comprised of strings storing data and a spare string group including at least two spare strings that store status information on the data stored in the main string group.

Nonvolatile memory device and method for storing status information using multiple strings

A method and an apparatus for managing bad blocks generated while a flash memory is being used. A method for managing a bad block in a flash memory includes (a) allocating a used area having a plurality of used blocks and a spare area having a plurality of spare blocks in the flash memory, and providing a block map page group including a plurality of block map pages in which mapping information to map a bad block generated in either of the used area or the spare block to a spare block, (b) having mapping information of the block map page reside among the block map page groups in the memory, and (c) mapping the bad block generated during a flash operation to an unused spare block found through the mapping information, updating the mapping information, and recording the updated mapping information on the block map page.

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Bucheon-si, South Korea

Song-ho Yoon