Samsung Electronics Co., Ltd.

Zeen Information Technologies, Inc.

Song-Ho Yoon

Woon-Jae Chung

Jun-Ho Jang

Jin-kyu Kim

In-Hwan Choi

Kyung-Wook Ye

Dong-Woo Kim

Dong-Min Kim

Min-young Kim

Wook-Han Jeong

Ji-hyun In

Kyoung-Il Bang

Bum-Soo Kim

Dong-woo Kim

Nam-Yoon Woo

Su-Ryun Lee

Jae-hyuck Yoo

Dong-hee Lee

Kwang-yoon Lee

Sung-Kwan Kim

Min-Young Kim

Jin-Kyu Kim

Kyoung-il Bang

A method of operating a storage device includes receiving, at the storage device, a meta information transfer command based on a data read request. The meta information transfer command is received from a host device. The method further includes receiving, at the storage device, a data read command corresponding to the data read request and the meta information transfer command. The data read command is received from the host device. The method further includes receiving, at the storage device, a plurality of meta data corresponding to the data read request and the meta information transfer command. The plurality of meta data is received from the host device. The method further includes performing a data read operation, at the storage device, based on the data read command and the plurality of meta data.

Method of operating storage device, storage device performing the same and method of operating storage system using the same

Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Memory system, program method thereof, and computing system including the same

An apparatus and method for reorganizing mapping information in a flash memory are provided. The apparatus includes a sector-managing module that secures a mapping sector where mapping information is recorded in a physical unit, and determines whether user data is recorded up to a sector located in a predetermined position, and a mapping-information-recording module that records the mapping information in the mapping sector according to a result of the determination. Here, the mapping information includes a relation of a physical sector storing the user data and a logical sector corresponding to the physical sector.

Apparatus and method for reorganization of mapping information in flash memory

A semiconductor memory device includes adjacent planes and a control module. The adjacent planes include a reserve field and a data field having multiple blocks. The blocks of each of the reserve and data fields are successively arranged over the adjacent planes to form a multi-plane operation group. The control module is configured to control the adjacent planes to conduct a first operation or a second operation in accordance with whether the reserve field includes free blocks corresponding to a unit of the multi-plane operation group. The first operation includes replacing blocks of the data field with free blocks of the reserve field in the unit of the multi-plane operation group. The second operation includes replacing one block of the data field with one free block of the reserve field.

Semiconductor memory device and block management method of the same

An apparatus for providing atomicity with respect to a request of a write operation for successive sectors in a flash memory is provided. The apparatus includes a data write module writing data in a main sector of a page and allocating status bits indicating a status of the data write to a spare sector of the page, a write progress managing module overwriting a commit mark in the spare sector allocated with the status bits according to a progress status of the data write, and a validity determining module determining validity of the sectors on the basis of the overwritten commit mark and providing information of the successive sectors.

Apparatus and method for providing atomicity with respect to request of write operation for successive sector

Methods of operating a non-volatile multi-bit memory device can include programming multi-bit memory cells included in one page of the device with page data including an error detection code based on the page data and determining the validity of the page data using the error detection code read from the multi-bit memory cells in response to an error during programming of the multi-bit memory cells, wherein the multi-bit memory cells in the one page are configured to store a single bit of the page data.

Methods of operating multi-bit flash memory devices and related systems

Provided is an apparatus and method for managing mapping information of a nonvolatile memory, in which a time period required for a request for access to a logic sector of the nonvolatile memory is minimized. The apparatus includes an extractor which extracts a logical sector mapped with each physical sector in physical units mapped with a predetermined logical unit, a mapping information generator which generates mapping information of logical sectors belonging to the logical unit including the extracted logical sector, and a mapping information memory which stores the generated mapping information.

Apparatus and method for managing mapping information of nonvolatile memory

An apparatus includes a nonvolatile memory including a plurality of memory cells, each configured to store data having at least two bits and a control circuit configured to write data to a first memory cell connected to a wordline of the nonvolatile memory and to then write data to a second memory cell that is connected to wordline and shares a bit buffer with the first memory cell.

Multi-level cell memory devices and methods using sequential writing of pages to cells sharing bit buffers

Growing community of inventors

Yongin-si, South Korea

Song-Ho Yoon