Samsung Electro-Mechanics Co., Ltd.

Korea Advanced Institute of Science and Technology

Other

Samsung Electronics Co., Ltd.

Electronics and Telecommunications Research Institute

Song Cheol Hong

Gyu Suck Kim

Yoo Sam Na

Ki Yong Son

Bon Hoon Koo

Byeong Hak Jo

Seung Hoon Kang

Hyun Kyu Yu

Youn Suk Kim

Sang Hoon Cheon

Gyu Won Kim

Mun Yang Park

Yu Sin Kim

Pil Jae Park

Chan Yong Jeong

Jang Hong Choi

Seong Do Kim

Yun Su Jin

Tae Ho Yoon

Hyun Ho Boo

Tae Hwan Joo

Sea Houng Cho

Sun Bo Shim

Sang Hyun Baek

Heung Seob Koo

A power amplifier includes a common source amplifier and a common gate amplifier circuit. The common source amplifier circuit has a terminal connected to a radio frequency (RF) input terminal and uses a source terminal commonly as an input terminal and an output terminal of the power amplifier. The common gate amplifier circuit has a terminal connected to the common source amplifier circuit and another terminal connected to an RF output terminal, and uses a gate terminal commonly as the input terminal and the output terminal of the power amplifier. The common gate amplifier circuit includes a Doherty amplifier including a main power amplifier and an auxiliary power amplifier that is connected to the main power amplifier in parallel.

Common gate amplifier circuit and power amplifier using the same

A power amplifier according to examples includes an amplifying circuit configured to amplify an input signal, a feedback circuit configured to feedback the amplified signal to the amplifying unit, and a feedback controlling circuit configured to control a power of the fed-back signal based on a power of the input signal. The feedback controlling unit performs controlling so that the power of the fed-back signal is increased as the power of the input signal is increased.

Power amplifier

A power amplifier include an amplifier including at least one field effect transistor (FET) that operates in an amplifying stage configured to amplify an input signal, and a body controller configured to control a bias voltage of a body terminal of the FET based on a power of the input signal. The body controller performs controlling so that the bias voltage of the body terminal is reduced in response to the power of the input signal being increased. Accordingly, such a power amplifier exhibits improved linearity.

A bias circuit may include an envelope detecting unit detecting an envelope of an input signal, a source voltage generating unit generating a source voltage using a power supply voltage, and an envelope amplifying unit receiving the power supply voltage and the source voltage as a driving voltage and amplifying an envelope signal detected by the envelope detecting unit to generate a first bias voltage.

Adaptive bias circuit and power amplifier

There is provided a power amplifier capable of increasing linear output power and efficiency without sacrificing an overall gain by employing a vector modulation function in a driving stage, with no separate vector modulator. The power amplifier includes a driving stage performing vector-modulation on an input RF signal to provide an I channel signal and a Q channel signal having different phases and amplifying the I channel signal and the Q channel signal to set gains; and a power stage amplifying power levels of the signals amplified by the driving stage.

There is provided a power amplifier including an amplifying unit having at least two cascode amplifiers connected in parallel to amplify an input signal; and a bias supply unit supplying bias power to a common gate node of the two cascode amplifiers, and removing a signal of a pre-set frequency band corresponding to a baseband at the common gate node by controlling impedance of the common gate node.

A digital RF converter, a digital RF modulator, and a transmitter are provided. The digital RF converter includes a delta-sigma modulated bits (DSMB) sub-block that generates a current magnitude corresponding to least-significant n bits among input signals at a first sampling speed, a least-significant bit (LSB) sub-block that generates a current magnitude corresponding to intermediate k bits among the input signals at a second sampling speed lower than the first sampling speed, and a most-significant bit (MSB) sub block that generates a current magnitude corresponding to most-significant m bits among the inputs signals at the second sampling speed.

Digital RF converter, digital RF modulator and transmitter including the same

There is provided a multi-mode power amplifier operable in a low power mode having a preset power range and in a high power mode having a power range higher than the power range of the low power mode. The multi-mode power amplifier includes: a high power amplifying unit including at least one cascode amplifier to amplify an input signal to a high power level having a preset power range; a low power amplifying unit sharing a common source node of the at least one cascode amplifier to amplify the input signal to a low power level having a power range lower than the high power level; and a coupling unit coupling a transfer path of a signal output from the high power amplifying unit and a transfer path of a signal output from the low power amplifying unit to each other.

Multi-mode power amplifier

There is provided a power amplifier capable of supplying variable bias to an amplifier circuit by accurately transferring the envelope components of an input signal during the supply of active bias power to the amplifier circuit. The power amplifier includes: an envelope detector detecting an envelope of an input signal; a bias power generator including at least one P-type MOSFET and one N-type MOSFET connected to each other in an inverter manner between a driving power terminal supplying driving power having a preset voltage level and a reference bias power terminal supplying preset reference bias power to generate bias power varied according to detection results from the envelope detector; and an amplifier amplifying the input signal according to the bias power level from the bias power generator.

Disclosed herein is an asymmetric power divider. The asymmetric power divider includes a power dividing unit, a first matching network, and a second matching network. The power dividing unit supplies different amounts of power to a carrier amplifier and a peaking amplifier, which are connected in parallel. The first matching network is connected between the power dividing unit and the carrier amplifier so as to perform impedance matching between the power dividing unit and the carrier amplifier. The second matching network is connected between the power dividing unit and the peaking amplifier so as to perform impedance matching between the power dividing unit and the peaking amplifier.

Asymmetric power divider

Disclosed is a method for manufacturing a hetero junction bipolar transistor capable of forming a ledge by using a low-priced contact aligner and in a selective wet etching manner, without having any expensive stepper and dry etching and forming a ballasting resistor, without having an additional NiCr thin film, whereby the manufacturing processes thereof can be embodied in simple and easy manners, thereby improving productivity and an economical efficiency.

Growing community of inventors

Daejeon, South Korea

Song Cheol Hong