Applied Materials, Inc.

Ancora Heart, Inc.

Cisco Technology, Inc.

Lsi Logic Corporation

Silicon Image Gmbh

Guided Delivery Systems, Inc.

Lattice Semiconductor Corporation

Son Truong Nguyen

Dmitry Lubomirsky

Anh Ngoc Nguyen

Lily L Pang

Wei Liu

Tetsuya Ishikawa

Yuriy Melnik

Kenric T Choi

Johanes F Swenberg

Anzhong Chang

David H Quach

Olga Kryliouk

Eugene Serina

Tammy Y Tam

Huu Nguyen

Harsukhdeep S Ratia

Anchuan Wang

Zhijun Chen

Russel Mahlon Sampson

Lin Xu

Scott A Hendrickson

Charles J Adam

Hanh D Nguyen

Jose Antonio Marin

Inna Shmurun

Roger Curtis

David Scott Baron

Philip A Bottini

Jian Li

Pravin K Narwankar

Nir Merry

David Palagashvili

Malcolm J Bevan

Shreyas Kher

Bernard Lloyd Hwang

Jeslin Antony Puthenparambil

Paul L Deaton

Kirby Hane Floyd

Yeuk-Fai Edwin Mok

Ian A Pancham

Sudhakar R Gouravaram

Tao Hou

Khai Ngo

Gary J Rosen

Naveen Gunukula

Byung Lim

Michael Xiaoxuan Yang

Shankar Venkataraman

Alexander N Lerner

Ming Xi

Sanjay Krupakar Bhat

Arulkumar P Shanmugasundram

Himanshu Pokharna

Sean M Seutter

Chen-An Chen

Sandeep Nijhawan

Kenneth David Schatz

Guenter E Roeck

Min-Kyu Kim

Brian Hayes Burrows

Alan Hiroshi Ouye

Allen L D'Ambra

Mark A Fodor

Yen-Kun Victor Wang

Henry Ho

Kedarnath Sangam

Lu Chen

Chinsong Sul

Alexander Tam

Tien Fak Tan

Johanes S Swenberg

Sunil Khaunte

Jie Su

Laksheswar Kalita

Michael Jon Fong

Chrisanto Leano

Anqing Cui

Xianzhi Tao

Russell C Ellwanger

Bernardo Donoso

Yevgeniy Rabinovich

Miriam Schwartz

Shankar Muthukrishnan

Gwendolyn D Jones

Shaofeng Chen

Anand Vasudev

Svetlana Sherman

Eda Tuncel

Binh Hoa Tran

Edward Jewjing Jeng

Tuoh-Bin Ng

Michael J Mark

Eric B Britcher

Wei-Mun Chu

Shankar Venkataranan

Kelly Fong

Ernesto J Ulloa

Rahul Sharangapani

Paul Chhabra

Dien-Yeh (Daniel) Wu

Disclosed herein are devices and methods for assessing the surface of a target cardiac tissue and for delivering a tissue anchor to cardiac tissue at a preselected depth within the myocardium in a beating heart procedure. In one variation, an anchor delivery device comprises an elongate body, a tissue anchor disposed within a first longitudinal lumen of the elongate body, and a tissue depth indicator slidable within a second longitudinal lumen of the elongate body. The tissue depth indicator has a first configuration that indicates the boundary of the surface of the target tissue and a second configuration that indicates when the distal tip of the elongate body has been advanced to a preselected depth into the target tissue. In some variations, a tissue depth indicator may also be configured to resist or limit the penetration of the delivery device into tissue after a preselected depth has been reached.

Devices and methods of visualizing and determining depth of penetration in cardiac tissue

Described herein are devices and methods for delivering implants that include multiple coupled anchors. The anchors are secured to tissue using a multi-opening guide tunnel that is configured to releasably retain one or more portions of the implant located between two of the anchors. The releasable retention of one or more intervening portions of the implant maintains the position of the implant and the guide tunnel until the implant is secured to the tissue. The multi-opening guide tunnel permits securement of the multiple anchors without requiring repositioning of the guide tunnel for each anchor.

Multi-window guide tunnel

Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an spto sphybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

Semiconductor chamber coatings and processes

A workpiece carrier is described for a plasma processing chamber that has isolated heater plate blocks. In one example, a plasma processing system has a plasma chamber, a plasma source electrically coupled with a showerhead included within the plasma chamber, a workpiece holder in a processing region of the plasma chamber having a puck to carry a workpiece, wherein the workpiece holder includes a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, wherein each block includes a heater to heat a respective block of the heater plate, and wherein the workpiece holder includes a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate defining a cooling channel configured to distribute a heat transfer fluid to transfer heat from the cooling plate, and a temperature controller to independently control each heater.

Plasma processing system workpiece carrier with thermally isolated heater plate blocks

Implementations of the disclosure generally provide an improved pedestal heater for a processing chamber. The pedestal heater includes a temperature-controlled plate having a first surface and a second surface opposing the first surface. The temperature-controlled plate includes an inner zone comprising a first set of heating elements, an outer zone comprising a second set of heating elements, the outer zone surrounding the inner zone, and a continuous thermal choke disposed between the inner zone and the outer zone, and a substrate receiving plate having a first surface and a second surface opposing the first surface, the second surface of the substrate receiving plate is coupled to the first surface of the temperature-controlled plate. The continuous thermal choke enables a very small temperature gradient to be created and manipulated between the inner zone and the outer zone, allowing center-fast or edge-fast etching profile to achieve on a surface of the substrate.

Chamber apparatus for chemical etching of dielectric materials

A semiconductor processing system may include a substrate pedestal. The system may also include at least one fluid channel having a delivery portion configured to deliver a temperature controlled fluid to the substrate pedestal, and having a return portion configured to return the temperature controlled fluid from the substrate pedestal. The system may also include a heater coupled with the delivery portion of the at least one fluid channel. The system may also include a temperature measurement device coupled with the return portion of the at least one fluid channel, and the temperature measurement device may be communicatively coupled with the heater.

Methods and systems to improve pedestal temperature control

Embodiments described herein relate to a protective coating that protects an underlying chamber component (i.e. the object upon which the coating is being deposited) from corrosion or deterioration within a corrosive environment.

Chamber component with protective coating suitable for protection against fluorine plasma

A wafer carrier is described with independent isolated heater zones. In one example, the carrier has a puck to carry a workpiece for fabrication processes, a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, and each having a heater to heat a respective block of the heater plate, and a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate.

Wafer carrier with independent isolated heater zones

Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

Oxide etch selectivity systems and methods

A method and apparatus for heating or cooling a fluid is provided. In one embodiment, a heat exchanger is provided. The heat exchanger includes a first subassembly comprising an insert. The insert comprises a body having a blind passage formed axially in the body, a plurality of nozzles formed therein, and a first plurality of heat exchange elements disposed within the body. The heat exchanger also comprises a second subassembly comprising a sleeve and a second plurality of heat exchange elements disposed within the sleeve, wherein the insert is sealably engaged inside the sleeve and the insert and the sleeve cooperatively define a thin gap, and wherein each of the plurality of nozzles are disposed radially between the blind passage and the thin gap.

Gas heater

Described herein are devices and methods for delivering implants that comprise multiple coupled anchors. The anchors are secured to tissue using a multi-opening guide tunnel that is configured to releasably retain one or more portions of the implant located between two of the anchors. The releasable retention of one or more intervening portions of the implant maintains the position of the implant and the guide tunnel until the implant is secured to the tissue. The multi-opening guide tunnel permits securement of the multiple anchors without requiring repositioning of the guide tunnel for each anchor.

Growing community of inventors

San Jose, CA, United States of America

Son Truong Nguyen