Shindengen Electric Manufacturing Company Limited

Soichiro Umeda

Atsushi Kyutoku

Yuji Morinaga

Takenori Ishioka

Yoshihiro Kamiyama

A terminal member connected to a connection target portion includes: a bent portion bent toward the connection target portion; and a tip connection portion provided at a tip part of the bent portion, in which the tip connection portion is connected to the connection target portion via a conductive bonding material.

Tip connection portion of terminal member and associated semiconductor device

A semiconductor device according to the present invention includes: a circuit board; a semiconductor element having a main electrode; a metal frame; and a metal plate having a flat plate shape, the metal plate being disposed between the metal frame and the main electrode, wherein the metal plate and a conductive bonding material, form a stress relaxation structure which relaxes a stress applied to metal plate and the conductive bonding material, disposed between the metal frame and the semiconductor element, and the stress relaxation structure is configured such that a thickness of the metal plate is smaller than a thickness of the metal frame, and at least one convex portion is formed on the metal plate at a position which corresponds to the main electrode. The semiconductor device according to the present invention can relax a stress applied to a conductive bonding material between a semiconductor element and a metal frame even when a relatively thick metal frame is used.

Semiconductor device

A semiconductor device includes: an inner substrate on which a semiconductor chip is mounted, and has a surface on which terminals including electric path terminals are formed; a lead frame which has a chip connecting electrode portion which is electrically connected to a surface of the semiconductor chip via a conductive bonding member, substrate connecting electrode portions which are electrically connected to the electric path terminals of the inner substrate, and horizontal surface support portions which bulge to the outside from the chip connecting electrode portion or the substrate connecting electrode portions; and pin terminals which are mounted upright over the inner substrate in a direction perpendicular to flat surfaces of the substrate connecting electrode portions of the lead frame, wherein the horizontal surface support portions bulge to the outside of the inner substrate.

Semiconductor device and lead frame member

A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.

An electronic device has a sealing part, a first terminalprojecting outward from a first side surface of the sealing part, a second terminalprojecting outward from a second side surface different from the first side surface of the sealing part, an electronic elementprovided inside the sealing part, and a head partcoupled to the first terminaland the second terminal and connected to a front surface of the semiconductor elementvia a conductive adhesive

Electronic device, connection body, and manufacturing method for electronic device

A semiconductor device includes: a substrate; a semiconductor element that disposed on the upper surface of the substrate; a sealing portion that seals the substrate and the semiconductor element; a first lead frame that has one end in contact with a upper surface of the first conductive layer at an end extending in the side direction of the upper surface of the substrate in the sealing portion, and has the other end exposed from the sealing portion; a first conductive bonding material that bonds between the upper surface of the first conductive layer and the lower surface side of the one end portion of the first lead frame at the end portion of the substrate, and has electrical conductivity.

An electronic device has a sealing part, a first main terminalprotruding outward from the sealing part, a second main terminalprotruding outwardly from the sealing part, an electronic elementprovided in the sealing part and having a front surface electrically connected to the first main terminaland a back surface electrically connected to the second main terminal, a head partconnected to the front surface of the electronic element, a sensing terminalprotruding to an outside from the sealing partand used for sensing and a connection partintegrally formed with the head partand electrically connected to the sensing terminal. A current flowing through the sensing terminaland the connection partamong a sensing current path does not overlap a main current path flowing through the second main terminal, the electronic elementand the first main terminal

Electronic device and connection body

In a first step of a method of manufacturing a semiconductor device, a portion to be the first lead frame is formed by selectively punching a metal plate, furthermore, notch portions depressed in the reference direction are formed on both side surfaces of a portion, of the first lead frame where the first bent portion is formed, in line contact with the first conductive layer in the reference direction; in the second step of the method, a first bent portion is formed by bending the one end of the first lead frame so as to protrude downward along the reference direction; and in the third step of the method, the upper surface of the first conductive layer and the lower surface of the first bent portion of the first lead frame are joined at the end of the substrate, by the first conductive bonding material, furthermore, the upper surface of the first conductive layer and the notch portions of the first bent portion are joined, by embedding a part of the first conductive bonding material in the notch portions.

Method for manufacturing semiconductor device

A semiconductor device includes: a lead frame that has one end in contact with the upper surface of the second terminal of the semiconductor element in the sealing portion, and that has the other end exposed from the sealing portion; and a control conductive bonding material that bonds between the upper surface of the second terminal of the semiconductor element and the one end of the lead frame, and the control conductive bonding material having electric conductivity.

Semiconductor device and method of manufacturing semiconductor device

The one end portion of the connector of the semiconductor device includes: a horizontal portion; a first inclined portion that is connected to the horizontal portion and is located closer to the tip end side of the one end than the horizontal portion, and the first inclined portion having a shape inclined downward from the horizontal portion; and a control bending portion that is connected to the first inclined portion and positioned at the tip of the one end portion, and the control bending portion bent downwardly along the bending axis direction. The lower surface of the control bending portion is in contact with an upper surface of the second terminal.

Power module device containing semiconductor elements

A semiconductor device includes: a circuit unit including a semiconductor chip; a plurality of pin terminals formed in a rod shape extending in a same direction from the circuit unit and electrically connected to the circuit unit; a sealing resin portion sealing the circuit unit and first portions of the plurality of pin terminals positioned on a side of the circuit unit; and a plurality of covering resin portions integrally extending from an outer surface of the sealing resin portion from which second portions of the plurality of pin terminals protrude, the plurality of covering resin portions being formed in a cylindrical shape respectively covering base end portions of the second portions of the plurality of pin terminals, which are positioned on a side of the sealing resin portion.

Semiconductor device and semiconductor device manufacturing method

An electronic device has a sealing part, an electronic elementprovided in the sealing partand a connection bodyhaving a head partconnected to a front surface of the electronic elementvia a conductive adhesive. The head parthas a second projection protrudingtoward the electronic elementand a first projectionprotruding from the second projectiontoward the electronic element

An electronic device has a sealing part, an electronic elementprovided in the sealing part, a first terminal that projects outward from the sealing partand a connectorthat has a head partconnected to a front surface of the electronic elementvia a conductive adhesive, and a proximal end partconnected to the first terminal via a conductor layer. The head parthas a single first projection partthat projects toward the electronic element. The first projection partsinks into the conductive adhesiveand comes into point contact with the front surface of the electronic element. The proximal end parthas a plurality of protrusion partsor a support surface, contacting the conductor layer

Electronic device and connector

An electronic device has a substrate, a first conductor layerprovided on the substrate, a second conductor layerprovided on the substrate; an electronic element provided on the first conductor layer, and a sealing partcovering the substrate, the first conductor layer, the second conductor layer, and the electronic element. The first conductor layeris not provided on a virtual straight line VL including the second conductor layerin an in-plane direction of the substrate. The second conductor layeris sealed inside the sealing partand covered only with the sealing part

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Hanno, Japan

Soichiro Umeda