Kabushiki Kaisha Toshiba

Toshiba Energy Systems & Solutions Corporation

Kabusaires Kaisha Toshiba

Soichiro Shibasaki

Kazushige Yamamoto

Mutsuki Yamazaki

Naoyuki Nakagawa

Yuya Honishi

Sara Yoshio

Yoshiko Hiraoka

Yukitami Mizuno

Hiroki Hiraga

Shinya Sakurada

Michihiko Inaba

Yasutaka Nishida

Hitomi Saito

Hiroshi Ohno

Takeshi Niimoto

Miyuki Shiokawa

Atsushi Wada

Kohei Nakayama

Kanta Sugimoto

Taro Asakura

A solar cell according to an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer on the p-electrode, and an n-type layer between the p-type light-absorbing layer and the n-electrode. A first region is included in the p-type light-absorbing layer from a surface on the n-type layer side toward the p-electrode. The first region includes n-type dopant. A thickness of the first region is 1500 [nm] or more and a thickness of the p-type light-absorbing layer [nm]. A concentration of the n-type dopant of the first region is 1.0×10[cm] or more and 1.0×10[cm] or less. The concentration of the n-type dopant of the first region and a concentration of hole of the first region satisfy 10≤ the concentration of the n-type dopant/the concentration of hole ≤5.0×10.

Solar cell, multi-junction solar cell solar cell module, and photovoltaic power generation system

According to one embodiment, a solar cell includes first and second conductive layers, first and second counter conductive layers, first and second photoelectric conversion layers, first and second compound layers. The first counter conductive layer includes a first conductive region. A direction from the first conductive layer to the first conductive region is along a first direction. The first compound layer includes a first compound region provided between the first photoelectric conversion layer and the first conductive region. A second direction from the first conductive layer to the second conductive layer crosses the first direction. The second counter conductive layer includes a second conductive region electrically connected with the first conductive layer. A direction from the second conductive layer to the second conductive region is along the first direction. A direction from the first conductive region to the second conductive region is along the second direction.

Solar cell, multi-junction type solar cell, solar cell module, and solar cell power generation system

A solar cell according to an embodiment includes a first electrode being transparent, a first semiconductor layer on the first electrode, a second semiconductor layer on the first semiconductor layer, and a second electrode being transparent on the second semiconductor layer, wherein grooves exist regularly on a surface of the first semiconductor layer facing a side of the second semiconductor layer.

Solar cell, laminated body, multi-junction solar cell, solar cell module, and solar power generation system

A solar cell according to an embodiment includes a p-electrode, a p-type light-absorbing layer containing a cuprous oxide or/and a complex oxide of cuprous oxides as a main component on the p-electrode, an n-type layer containing an oxide containing Ga on the p-type light-absorbing layer, and an n-electrode. A first region is included between the p-type light-absorbing layer and the n-type layer. The first region is a region from a depth of 2 nm from an interface between the p-type light-absorbing layer and the n-type layer toward the p-type light absorbing layer to a depth of 2 nm from the interface between the p-type light-absorbing layer and the n-type layer toward the n-type layer. Cu, Ga, M1, and O are contained in the first region. M1 is one or more elements selected from the group consisting of Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, and Ca. A ratio of Cu, Ga, M1, and O is a1:b1:c1:d1. a1, b1, c1, and d1 satisfy 1.80≤a1≤2.20, 0.005≤b1≤0.05, 0≤c1≤0.20, and 0.60≤d1≤1.00.

Solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system

According to one embodiment, a solar cell includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode. In a case where a photoluminescence spectrum of the photoelectric conversion layer is measured at a temperature of 100 K or lower, a first maximum value (A) which is a maximum value of emission intensity in a wavelength range of more than 650 nm and 1000 nm or less is 100 times or less of a second maximum value (B) which is a maximum value of emission intensity in a wavelength range of 600 nm or more and 650 nm or less (A≤100B).

Solar cell, multi-junction solar cell, solar cell module, and solar power generation system

A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and comprising a cuprous oxide, and an n-type layer comprising a first n-type layer, which is located between the p-type light-absorbing layer and the n-electrode and comprising a defined compound aiding in conversion efficiency. The n-type layer further comprises a second n-type layer which is located between the first n-type layer and the n-electrode and mainly contains another compound aiding in conversion efficiency.

A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer that includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by GaZnSnM1O, the M1 being one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Mg, Si, and Ge, the v1, the v2, and the v4 being numerical values of 0.00 or more, the v3 and the v5 being numerical values of more than 0, at least one of the v1 and the v2 being a numerical value of more than 0, and the v5 when a sum of the v1, the v2, the v3, and the v4 is 1 being 1.00 or more and 2.00 or less, and which is located on the n-electrode side, and a second n-type layer which is a layer that mainly contains a compound represented by GaM2M3M4O, the M2 being Al or/and B, the M3 is one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M4 being one or more selected from the group consisting of Sn, Si, and Ge, the w1 and the w5 being numerical values of more than 0, the w2, the w3, and the w4 being numerical values of 0.00 or more, and the w5 when a sum of the w1, the w2, the w3, and the w4 is 2 being 3.00 or more and 3.80 or less, and which is located on the p-type light-absorbing layer side.

A solar cell of an embodiment includes a p-electrode; an n-electrode; a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide; and an n-type layer located between the first n-type layer and the n-electrode, the n-type layer including a first n-type layer and a second n-type layer or a first n-type region and a second n-type region; wherein the first n-type layer and the first n-type region is located on the p-type light-absorbing layer side, the second n-type layer and the second n-type region is located on the n-electrode side, the first n-type layer and the first n-type region mainly contain a compound represented by GaM1O, the M1 is one or more selected from the group consisting of Hf, Zr, In, Zn, Ti, Al, B, Sn, Si, and Ge, the x1, the x2, and the x3 are more than 0, and the x3 when a sum of the x1 and the x2 is 2 is 3.0 or more and 3.8 or less, the second n-type layer and the second n-type region mainly contain a compound represented by GaZnM2M3O, the M2 is one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Si, and Ge, the M3 is Sn or/and Mg, the y1, the y2, the y3, and the y4 are 0 or more, a sum of the y3 and the y4 is more than 0, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 is 2.2 or more and 3.6 or less.

A process for manufacturing a multilayered thin film, includes: forming a photovoltaic conversion layer, comprising CuO as a main component, on a first transparent electrode; and placing, under a first atmosphere at an oxygen level of from 5.0×10[g/L] to 5.0×10[g/L] for 1 h to 1600 h, a member having the photovoltaic conversion layer formed on the first transparent electrode.

Process for manufacturing multilayered thin film, method of manufacturing solar cell, and method for manufacturing solar cell module

A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by GaM1M2M3M4O, the M1 being Hf and/or Zr, the M2 being one or more selected from the group consisting of In, Ti, and Zn, the M3 being Al and/or B, the M4 is one or more selected from the group consisting of Sn, Si, and Ge, the x1, the x2, and the x6 being more than 0, the x3, the x4, and the x5 being 0 or more, and the x6 when a sum of the x1, the x2, the x3, the x4, and the x5 is 2 being 3.0 or more and 3.8 or less.

A solar cell of an embodiment includes: a transparent substrate; a p-electrode on the substrate, the p-electrode including a first p-electrode containing an Sn-based metal oxide, a second p-electrode having an opening and consisting of a wiring containing a metal or graphene, and a third p-electrode containing an In-based metal oxide; a p-type light absorbing layer in direct contact with a surface of the first p-electrode on a side opposite to the second p-electrode side; an n-type layer provided on the p-type light absorbing layer; and an n-electrode provided on the n-type layer. The third p-electrode is provided to be present between the first p-electrode and the second p-electrode and to be in direct contact with an upper surface of the second p-electrode. An entire side surface of the second p-electrode is in direct contact with the first p-electrode.

A method for manufacturing a stacked thin film, includes forming a photoelectric conversion layer on a first transparent electrode by sputtering using a target mainly composed of copper in an oxygen containing atmosphere. An oxygen partial pressure of the sputtering is in a range of 0.01 [Pa] or more and 4.8 [Pa] or less, and 0.24&#xd7;d [Pa] or more and 2.4&#xd7;d [Pa] or less when a deposition rate is d [&#x3bc;m/min], in formation of the photoelectric conversion layer. A sputtering temperature is 300&#xb0; C. or more and 600&#xb0; C. or less, in formation of the photoelectric conversion layer.

Method for manufacturing stacked thin film, method for manufacturing solar cell, and method for manufacturing solar cell module

A solar cell of an embodiment includes a p-electrode, a p-type light-absorbing layer directly in contact with the p-electrode, an n-type layer, and an n-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. A region from an interface between the p-type light-absorbing layer and the p-electrode tonm tonm from the interface in a direction of the n-type layer is a p+ type region including a p-type dopant.

The photoelectric conversion layer of an embodiment is based on CuO, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.

Photoelectric conversion layer, solar cell, multi-junction solar cell, solar cell module, and photovoltaic power system

The solar cell of embodiments includes a transparent first electrode, a photoelectric conversion layer mainly containing cuprous oxide on the first electrode, an n-type layer on the photoelectric conversion layer, and a transparent second electrode on the n-type layer. A mixed region or/and a mixed layer are present on the n-type layer side of the photoelectric conversion layer, and the mixed region and the mixed layer contain elements belonging to a first group, a second group, and a third group. The first group is one or more elements selected from the group consisting of Zn and Sn, the second group is one or more elements selected from the group consisting of Y, Sc, V, Cr, Mn, Fe, Ni, Zr, B, Al, Ga, Nb, Mo, Ti, F, Cl, Br, and I, and the third group is one or more elements selected from the group consisting of Ge and Si.

Growing community of inventors

Nerima, Japan

Soichiro Shibasaki