Fujitsu Corporation

Soichiro Ozawa

Shan Sun

Katsuyoshi Matsuura

Takeyasu Saito

George Hickert

Hideyuki Noshiro

Fan Chu

Satoru Mihara

Yoshimasa Horii

Jeffrey Scott Cross

Mitsushi Fujiki

Naoyuki Satoh

Naoki Nishida

Masaaki Aoyama

Kunihiko Nagase

A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO , wherein the PZT film includes pinholes, with a pinhole density of about 17 &mgr;m or less.

Ferroelectric semiconductor memory device and a fabrication process thereof

A method for the fabrication of a cap layer on a top electrode layer of a ferroelectric capacitor includes the steps of depositing an amorphous layer, usually made of Sr Ru O , on the top electrode and then annealing the amorphous layer in two stages in order convert the amorphous layer into the cap layer. The first anneal is performed at 500&deg; C. to 700&deg; C. in a non-oxidizing atmosphere, such as nitrogen, and converts the amorphous layer into a crystallized layer of Sr Ru O . The second anneal is performed at 300&deg; C. to 500&deg; C. in an oxidizing atmosphere, such as oxygen, and converts the crystallized layer into the cap layer. The method is applied to the formation of a ferroelectric capacitor element of an integrated semiconductor device.

Process for producing a strontium ruthenium oxide protective layer on a top electrode

A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO , wherein the PZT film includes pinholes, with a pinhole density of about 17/&mgr;m or less.

Ashing process of a resist pattern used in a semiconductor device manufacturing method is conducted by exposing the resist, the wirings, and their peripheral regions to a first atmosphere which includes a first product obtained by plasmanizing a gas containing water at a rate of more than 30 flow rate %, and placing the resist in a second atmosphere which includes a second product obtained by plasmanizing an oxygen mixed gas which contains an oxygen gas as a principal component before or after or before and after the exposing step.

Semiconductor device manufacturing method including ashing process

Growing community of inventors

Kawasaki, Japan

Soichiro Ozawa