Kioxia Corporation

Toshiba Memory Corporation

Soichi Yamazaki

Kosuke Horibe

Kei Watanabe

Toshiyuki Sasaki

Keisuke Kikutani

Yuya Matsubara

Atsuko Sakata

Kazuhito Furumoto

Junichi Wada

Mitsuhiro Omura

Junichi Hashimoto

Shunsuke Ochiai

Takehiro Kondoh

Yusuke Kondo

Masayuki Kitamura

Shinichi Nakao

Yusuke Oshiki

Jun Nishimura

Hideyuki Kinoshita

Tomo Hasegawa

Hisashi Harada

Kaori Narumiya

Junya Fujita

A film forming apparatus includes an electrode, a target holder configured to hold a film forming target so as to face the electrode, and a masking shield holder configured to hold a masking shield between the electrode and the target holder. The masking shield includes a lattice portion having a plurality of openings therein and a frame portion supporting the lattice portion.

Film formation apparatus, film formation method, and method for fabricating semiconductor device

A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

Method for producing semiconductor device

A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.

Method for manufacturing semiconductor device having a film with layers of different concentrations of elements

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

Manufacturing method of semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The second film includes fluoride of a first metal element having a first boiling point of 800&#xb0; C. or higher and fluoride of a second metal element having a second boiling point of 800&#xb0; C. or higher. The second metal element is different from the first metal element. The method further includes etching the first film using the second film as an etching mask and etching gas that includes fluorine.

Method of manufacturing semiconductor device

A semiconductor device of an embodiment includes a control circuit arranged on a substrate, a first conductive layer arranged on the control circuit and containing a first element as a main component, a multilayer structure arranged on the first conductive layer and configured such that multiple second conductive layers and multiple insulating layers are alternately stacked on each other, a memory layer penetrating the multilayer structure and reaching the first conductive layer at a bottom portion, a first layer arranged between the control circuit and the first conductive layer and containing the first element as a main component, and a second layer arranged between the control circuit and the first layer and containing, as a main component, a second element different from the first element.

Semiconductor device

A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.

Method of manufacturing semiconductor device and etching mask

According to one embodiment, a method for producing a semiconductor device includes forming a first film on a substrate. A second film is formed on the first film. A recess is formed in the second film. First processing by which a third film is formed on the second film to form a side face of the recess with the second film and second processing by which the first film exposed in the recess is processed by using the second and third films, are executed one or more times. In relation to an N-th (N is an integer greater than or equal to 1) first processing, before the third film is formed on the second film, a surface inclined with respect to the side face of the recess is formed above the side face of the recess.

According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.

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Yokkaichi Mie, Japan

Soichi Yamazaki