Kabushiki Kaisha Toshiba

Soichi Yamazaki

Koji Yamakawa

Katsuhiko Hieda

Katsuaki Natori

Masahiro Kiyotoshi

Hiroyuki Kanaya

Keisuke Nakazawa

Kazuhiro Eguchi

Hiroshi Itokawa

Atsuko Kawasaki

Katsuhiko Tachibana

Katsuya Okumura

Kyoichi Suguro

A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lower electrode and the upper electrode, the lower electrode including a noble metal film, and a plurality of conductive oxide films formed in an islands arrangement on the noble metal film.

Method of manufacturing semiconductor device with lower capacitor electrode that includes islands of conductive oxide films arranged on a noble metal film

Semiconductor device with lower capacitor electrode that includes islands of conductive oxide films arranged on a noble metal film

According to an aspect of the invention, there is provided a semiconductor device including a semiconductor substrate, a lower electrode film formed on the semiconductor substrate, a dielectric film formed on the lower electrode film, and an upper electrode film formed on the dielectric film, wherein the lower electrode film, the dielectric film and the upper electrode film construct a capacitor in a predetermined region on the semiconductor substrate, the dielectric film is separated from the upper electrode film outside the predetermined region, and the dielectric film is formed continuously with respect to an adjacent cell.

Semiconductor device and method of manufacturing the same

There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a dielectric film formed on the bottom electrode, and a top electrode formed on the dielectric film and having a plurality of hole patterns.

Semiconductor device

A method of manufacturing a semiconductor device, including forming a capacitor above a semiconductor substrate, the capacitor including a dielectric film containing Pb, Zr, Ti and O. Forming the capacitor includes forming a crystallized film which contains Pb, Sr, Zr, Ti, Ru and O.

[object Object]

A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a ferroelectric capacitor arranged above the semiconductor substrate; an insulating protecting film covering a side surface of the ferroelectric capacitor; and a side wall film formed on a side surface of the ferroelectric capacitor through the protecting film and giving tensile stress to the ferroelectric capacitor in a direction of an electric field applied to the ferroelectric capacitor.

A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.

According to an aspect of the invention, there is provided a semiconductor device comprising a capacitor formed above a semiconductor substrate by sandwiching a dielectric film between a lower electrode and an upper electrode including an electrode film which contains an MOtype conductive oxide (M is a metal element, O is an oxygen element, and x&#x3e;0), and a contact connected to the upper electrode, wherein a film thickness of the electrode film immediately below the contact is smaller than a film thickness of the electrode film in the other portion.

Semiconductor device and method of fabricating the same

There is disclosed a method of manufacturing a semiconductor device, wherein an SiNfilm is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A solution of perhydrogenated silazane polymer is coated on the surface of the silicon substrate having an STI trench formed thereon to deposit a coated film (PSZ film) thereon. The PSZ film deposited on the mask member is removed, leaving part of the PSZ film inside the trench, wherein the thickness of the PSZ film is controlled to make the height thereof from the bottom of the STI trench become 600 nm or less. Thereafter, the PSZ film is heat-treated in a water vapor-containing atmosphere to convert the PSZ film into a silicon oxide film through a chemical reaction of the PSZ film. Subsequently, the silicon oxide film is heat-treated to densify the silicon oxide film.

Method for manufacturing a semiconductor device

Disclosed is a method for manufacturing a semiconductor device, comprising forming an insulating film above a semiconductor substrate having an element formed thereon, forming an anti-reflection layer that is impermeable to hydrogen on the insulating film, the anti-reflection layer comprising a layer formed of at least one material selected from the group consisting of silicon nitride, silicon oxynitride, chromium oxide, CrOF, CrAlO, AlSiO, ZrSiO, silicon oxycarbide, carbon, chromium nitride, titanium nitride, tantalum nitride, aluminum nitride, TiAlN, TaAlN, TiSiN, AlSiN(where x and y denote the component ratio), and silicon carbide, forming a resist pattern on the anti-reflection layer, forming a hole in the insulating film with the resist pattern used as a mask, burying a conductive material in the hole to form a plug, removing the resist pattern, and forming a ferroelectric capacitor above the anti-reflection layer.

Method for manufacturing semiconductor device

Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.

Disclosed is a semiconductor device comprising a semiconductor substrate, an insulating region provided on the semiconductor substrate, a first capacitor provided above the insulating region, a second capacitor provided above the insulating region and adjacent to the first capacitor, a conductive hydrogen-barrier film which prevents diffusion of hydrogen into the first and second capacitors and connects a bottom electrode of the first capacitor with a bottom electrode of the second capacitor, the conductive hydrogen-barrier film having a first portion interposing between the insulating region and the first capacitor and between the insulating region and the second capacitor.

Semiconductor device having ferroelectric capacitors

Presented is an etching method capable of easily etching an oxide containing an alkaline-earth metal. One method is to etch the oxide by using an etching gas containing a halogen gas except for fluorine, an interhalogen compound consisting of only a halogen element except for fluorine, or a halogen hydride consisting of a halogen element except for fluorine and hydrogen. Particularly chlorides, bromides, and iodides of alkaline-earth metals have relatively high vapor pressures, so a thin film containing an alkaline-earth metal can be etched by using chlorine gas, bromine gas, or iodine gas. When a halogen gas containing fluorine is used, damages to SiO portions used in a film formation apparatus are prevented by coating these SiO portions with a fluoride of an alkaline-earth metal.

Etching method and cleaning method of chemical vapor growth apparatus

A semiconductor device with a charge holding capacitor comprises a lower electrode connected via a plug to one of the source and drain of an MIS transistor, a capacitor insulating film formed the lower electrode, an upper electrode formed on the capacitor insulating film. The lower electrode includes a first constituting portion that is embedded in a hole in which the plug has been embedded and so formed that it self-aligns with the plug and a second constituting portion which is formed on the first constituting portion and on regions outside the fist constituting portion and whose cross section is larger than that of the first constituting portion. The first constituting portion and the second constituting portion are formed integrally by a continues film.

Growing community of inventors

Yokohama, Japan

Soichi Yamazaki