Seiko Epson Corporation

Soichi Moriya

Takeo Kawase

Mitsuaki Harada

Koji Sumi

Kiyoshi Nakamura

Tsutomu Miyamoto

Takashi Aoki

Hiroyuki Kamei

Hong Qiu

Yoshinao Miyata

Masato Shimada

Shiro Yazaki

Tsutomu Nishiwaki

Masami Murai

Atsushi Miyazaki

Tsutomu Hashizume

Hirofumi Hokari

Tomoyuki Okuyama

Kei Kamakura

Takehisa Saeki

Kazuhiko Fujimori

Toru Katakabe

The electrophoretic display device includes an element substrate (first substrate), a counter substrate (second substrate) being disposed opposite to the element substrate, a partition being disposed between the element substrate and the counter substrate, and a dispersion liquid containing electrophoretic particles and the dispersion medium, which is disposed in a cell (space) defined by the partition. Further, a pixel electrodes (first electrode) is disposed on the dispersion liquid side of the element substrate, a common electrode (second electrode) is disposed on the dispersion liquid side of the counter substrate, the electrophoretic display device includes a coating layer on a surface in contact with the dispersion liquid in at least one electrode side of the pixel electrode and the common electrode, and the contact angle to water of the coating layer is not less than 60&#xb0;.

Electrophoretic display device and electronic apparatus

A manufacturing method of an organic semiconductor film according to the invention includes applying a liquid composition in which an organic semiconductor material is dissolved or dispersed in a first solvent onto a base material in a predetermined pattern, applying a second solvent in which solubility of the organic semiconductor material is lower than that in the first solvent onto a region of the base material having the liquid composition applied thereto, and removing the second solvent.

Manufacturing method of organic semiconductor film, organic semiconductor film, thin film transistor, active matrix device, electro-optical device, and electronic device

An electrophoretic display device includes a common electrode, pixel electrodes, and a disperse system of electrophoretic particles. A transistor supplies one of the pixel electrodes with a first potential or a second potential higher than the first potential. During a first period, a control portion supplies a third potential to the gate electrode to turn on the transistor, supplies the first potential to a signal line or the common electrode, and supplies the second potential to the other line. During a second period, the control portion supplies a fourth potential higher than the third potential to the gate electrode to turn off the transistor, and supplies the first potential to both the signal line and the common electrode so that the pixel electrode potential substantially reaches the common electrode potential. The third potential is lower than the second potential and the fourth potential is higher than the first potential.

Electrophoretic display device, electronic apparatus, and method of driving electrophoretic display device

An electrooptical device substrate, contains: a first insulating film provided on a substrate; two or more pixels; a first concave portion provided in the first insulating film over the two or more pixels; a second concave portion provided on the bottom surface of the first concave portion; a thin film transistor containing an organic semiconductor layer provided in the second concave portion, a gate insulating film provided on the organic semiconductor layer, and a gate electrode provided on the gate insulating film and being matched to one pixel among the two or more pixels; a scanning line which is provided at an upper side with respect to the gate insulating film and provided in the first concave portion over the two or more pixels; and a data line electrically connected to the thin film transistor.

Electrooptical device substrate and method for manufacturing the same, electrooptical device, and electronic apparatus

A method for producing an active-matrix substrate including a board, pixels, thin-film transistors that switch the pixels, and source lines and gate lines electrically connected to the thin-film transistors includes forming a conduction portion that provides electrical connection between the source lines and the gate lines using an organic conductive material at the same time as forming either the source lines or the gate lines; and breaking the electrical connection provided by the conduction portion.

Active-matrix substrate and method for producing the same, electrooptical device and method for producing the same, and electronic apparatus

Provided is a thin film transistor including a substrate, a source electrode and a drain electrode disposed above the substrate so as to oppose each other, an organic semiconductor film disposed between the source electrode and the drain electrode to generate a channel region, and a gate electrode disposed opposite the organic semiconductor film via a gate insulating film. The gate electrode includes an aperture in the channel region.

Thin film transistor, matrix substrate, electrophoresis display device, and electronic apparatus

A display apparatus includes a substrate; a display area including a plurality of pixels provided on the substrate; a switching element provided for each of the pixels, the switching element including a first semiconductor layer formed of a first organic semiconductor; and a humidity sensor provided on the substrate and outside the display area. The humidity sensor includes, as a humidity sensitive layer, a second semiconductor layer formed of a second organic semiconductor having a correlation in terms of electric characteristics with the first organic semiconductor.

Display apparatus and electrophoretic display apparatus

To reduce or prevent metal wirings formed on one substrate and electrodes formed on the other substrate from being shorted. An electrophoretic display in which, a display part including electrophoretic particles electrophoresed by application of an electric field, and an electrophoretic display part including an electrode to apply the electric field to the display part, are bonded to a substrate. The substrate includes a metal wiring including an insulating part disposed at a position that corresponds to at least a part of an edge of the electrode.

Electrophoretic display and method of manufacturing the same

A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a semiconductor layer, and a gate insulating layer for insulating the source electrode and the drain electrode from the gate electrode, wherein the gate insulating layer includes composite particles in which a hydrophobic compound is provided on the surfaces of insulating inorganic particles.

Thin-film transistor, electronic circuit, display unit, and electronic device

A method of forming a contact hole includes forming a first conductive layer patterned so as to serve as an electrode or a wiring on a substrate, forming an insulation layer on the substrate and the first conductive layer, inserting a cutting instrument into the insulation layer at an angle to a surface of the insulation layer, the angle being in the range from 5&#xb0; to 80&#xb0;, and forming a tapered opening extending to the electrode or the wiring in the insulation layer by drawing out the cutting instrument.

Method of forming contact hole, method of manufacturing wiring board, method of manufacturing semiconductor device, and method of manufacturing electro-optical device

Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a high-reliability electronic circuit, a display, and an electronic device. In an exemplary thin-film transistor according to the invention, a gate electrode can be formed on a substrate via an underlying layer, and a gate insulating layer can be formed on the substrate such that the gate electrode is covered with the gate insulating layer. A source electrode and a drain electrode are formed on the gate insulating layer such that they are separated from each other by a gap formed just above the gate electrode. An organic semiconductor layer can be formed thereon such that the electrodes are covered with the organic semiconductor layer. A region between the electrodes of the organic semiconductor layer functions as a channel region. A protective layer can be arranged on the organic semiconductor layer. This thin-film transistor is characterized in that the organic semiconductor layer is formed after the gate insulating layer is formed, and the gate insulating layer has the capability of causing the organic semiconductor layer to be aligned.

Thin-film transistor, method of producing thin-film transistor, electronic circuit, display, and electronic device

An electrophoretic display device includes a transparent element substrate, a transparent opposite substrate, an electrophoretic display layer, and a selector. The element substrate has at least one transparent pixel electrode. The opposite substrate has a common electrode that is in correspondence with the at least one pixel electrode. The electrophoretic display layer is held between the element substrate and the opposite substrate. The selector selects any one of the element substrate and the opposite substrate as a display side of the electrophoretic display layer.

Method of driving electrophoretic display device, and electrophoretic display device

A semiconductor device includes first and second electrodes disposed apart from each other on a substrate, a gate electrode disposed so as to face the first and second electrodes and to cover at least part of each of the first and second electrodes, a semiconductor layer disposed between the first and second electrodes and the gate electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, the gate insulating layer having a film thickness that is greater in portions located directly above areas where the first and second electrodes are under the gate electrode than in a portion located directly above an area between the first and second electrodes.

Semiconductor device, electronic apparatus, method of manufacturing semiconductor device, and method of manufacturing electronic apparatus

A method for forming a contact hole, a method for manufacturing a circuit board and a method for manufacturing an electro-optical device that increase the reliability of electrical coupling via a conductive part and prevent wire-breaking due to projections when forming a contact hole in an interlayer film by using a needle, and burying a conductive material in the contact hole is provided.

Methods for forming contact hole, for manufacturing circuit board and for manufacturing electro-optical device

A region of an electrooptical device includes a substrate, an active matrix switching element formed on the substrate and a pixel electrode formed on the substrate and having a first pixel electrode coupled to the switching element AM and a second pixel electrode covering a second switching element coupled to a third electrode.

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Chino, Japan

Soichi Moriya