Applied Materials, Inc.

Verily Life Sciences LLC

Sohyun Park

Hichem M'Saad

Li-Qun Xia

Deenesh Padhi

Bok Hoen Kim

Tzu-Fang Huang

Daniel B Otts

Ganesh Balasubramanian

Dimitri T Azar

Derek R Witty

Patricia Johnson

Jeremy L Emken

Anil Kumar Ram Rakhyani

Igor Landau

Brooke C Basinger

Juan Carlos Rocha-Alvarez

Zhenjiang Cui

Naomi Yoshida

Hang Yu

Peter Wai-Man Lee

Shahid Shaikh

Heung Lak Park

Siu Fai Cheng

Li Yan Miao

Lihua Li

Wen H Zhu

Man-Ping Cai

Jerry Sugiarto, Legal Representative

Visweswaren Sivaramakrishnan

Karthik Janakiraman

Xinhai Han

Martin Jay Seamons

Sudha S Rathi

Nagarajan Rajagopalan

Chiu Chan

Hyoung-Chan Ha

Ji Ae Park

Tsutomu Kiyohara

Patricia E Johnson

Techniques and mechanisms for the wireless transmission of power or control signals between two components of an implantable ophthalmic system are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power or control signals.

Intraocular device with wirelessly coupled auxiliary electronics

Techniques and mechanisms for the wireless transmission of power and sensor information between two components of an implantable ophthalmic device are disclosed herein. An example device includes an accommodating intraocular lens (aIOL) and separate auxiliary electronics, both enclosed in biocompatible materials. The aIOL includes a dynamic optic, control logic, a battery and an antenna. The auxiliary electronics include an antenna, an energy storage cell, and a sensor. The auxiliary electronics may be wirelessly coupled to the aIOL for the wireless transmission of power and sensor information.

A near-eye display including a light source, an optical system, and a phase map including multiple pixels. The optical system is configured to receive illumination light from the light source and output the illumination light as an in-phase wavefront. Control logic of the near-eye display is coupled to variously program different phase patterns of the phase map at different times. The phase patterns are each to variously adjust phases of respective portions of the in-phase wavefront. For each of the phase patterns, the phase map is to form a different respective image in response to being illuminated by the in-phase wavefront.

Device, system and method for image display with a programmable phase map

A contact lens includes a transparent material, a substrate material, a light source, an optical system, and a phase map. The transparent material has an eye-side opposite an external side. The eye-side is curved to fit the human eye. The light source is configured to emit illumination light. The optical system is configured to receive the illumination light from the light source and output the illumination light as an in-phase wavefront. The phase map is configured to adjust a phase of the in-phase wavefront to form an image at a retina-distance in response to being illuminated by the in-phase wavefront. The phase map is pre-recorded with a phase pattern that is included in the image.

Contact lens with phase map display

A near-eye display includes a light source, an optical system, and a phase map. The light source emits illumination light. The optical system is configured to receive the illumination light from the light source and output the illumination light as an in-phase wavefront. The phase map is configured to adjust a phase of the in-phase wavefront to form an image in response to being illuminated by the in-phase wavefront. The phase map is pre-recorded with a phase pattern that generates the image.

Near-eye display with phase map

Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.

Amorphous carbon deposition method for improved stack defectivity

Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first layer of a first material on the substrate. A plasma purge and gas purge are performed before a second processing gas is used to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated and the additional layers of first and second materials are deposited on the layer stack.

PECVD oxide-nitride and oxide-silicon stacks for 3D memory application

A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.

Method for depositing an amorphous carbon film with improved density and step coverage

A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.

Method to deposit functionally graded dielectric films via chemical vapor deposition using viscous precursors

A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture.

Oxide-like seasoning for dielectric low k films

Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.

Adhesion improvement for low k dielectrics

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Santa Clara, CA, United States of America

Sohyun Park