Freescale Semiconductor,inc.

Sohrab Safai

Tu-Anh N Tran

David Clegg

Peter R Harper

Sheila F Chopin

Susan H Downey

Alan H Woosley

Mark Allen Gerber

Dae Y Hong

A conductive structure is formed in a last metal layer of an integrated circuit. Passivation material is patterned over a portion of the conductive structure. A first trench is patterned around a selected portion of the passivation material. The selected portion represents a bond region of a wire bond to be formed above the passivation material. A portion of the passivation material completely covers a bottom of the trench. A layer of conductive material is conformally deposited over the passivation material. The conformal depositing resulting in a second trench forming in the conductive material over the first trench in the passivation material. The second trench is positioned to contain at least a portion of a splash of the conductive material when the wire bond is subsequently formed.

Bond pad having a trench and method for forming

A semiconductor device comprises an integrated circuit including a wire bond pad and a passivation material, and a first gap between a first selected portion of the wire bond pad and the passivation material. The first gap is positioned to contain at least a first portion of a splash of the wire bond pad formed during a wire bond process.

Bond pad and passivation layer having a gap and method for forming

An integrated circuit is packaged using a package substrate that has a bottom side with a regular array of connection points and a top side with the integrated circuit on it. The package substrate also has vias that are present to provide electrical connection between the top and bottom sides. The vias have a via capture pad that is used to directly receive a wire bond. Thus, the wires from the integrated circuit to the top side directly contact the vias at their capture pads. In such a connection there is then no need for a trace from location where the wire is bonded on the top side to the via. This saves cost. Further this makes the package substrate useful for more than one type of integrated circuit.

Packaged integrated circuit having wire bonds and method therefor

A multi-die semiconductor package having an electrical interconnect frame. A top integrated circuit die is attached to the top side of an upper contact level of the frame and a bottom integrated circuit die is attached to the bottom side of the upper contact level of the frame. The die bond pads of the top die are electrically coupled (e.g. wired bonded) to pads of a lower contact level of the interconnect frame. The die bond pads of the bottom integrated circuit die are electrically coupled (e.g. wired bonded) to bond pads of the upper contact level of the frame. The bond pads of the lower contact level serve as external bond pads for the package. The frame may include inset structures, each having an upper portion located in the upper contact level and a lower portion located in the lower contact level.

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Austin, TX, United States of America

Sohrab Safai