Hitachi, Ltd.

Renesas Technology Corp.

Sohei Omori

Yusuke Nonaka

Fumio Ootsuka

Hideto Kazama

Satoshi Shimamoto

Keiichi Higeta

Akihisa Uchida

Yasuhiro Fujimura

Etsuko Iwamoto

In order to improve the performance of a semiconductor integrated circuit device wherein a capacitor provided between storage nodes of an SRAM and a device having an analog capacitor are formed on a single substrate, a plug is formed in a silicon oxide film on a pair of n channel type MISFETs in a memory cell forming area, and a local wiring LIc for connecting respective gate electrodes and drains of the pair of n channel type MISFETs is formed over the silicon oxide film and the plug. Thereafter, a capacitive insulating film and an upper electrode are further formed over the local wiring LIc. According to the same process step as the local wiring, capacitive insulating film and upper electrode formed in the memory cell forming area, a local wiring LIc, a capacitive insulating film and an upper electrode are formed over a silicon oxide film in an analog capacitor forming area and a plug in the silicon oxide film.

Semiconductor integrated circuit device and a method of manufacturing the same

To improve performance, a capacitor is provided between storage nodes of an SRAM and a device having an analog capacitor on a single substrate, a plug is formed in a silicon oxide film on a pair of n channel type MISFETs in a memory cell forming area, and a local wiring LIc for connecting respective gate electrodes and drains of the pair of n channel type MISFETs is formed over the silicon oxide film and the plug. Thereafter, a capacitive insulating film and an upper electrode are formed over the local wiring LIc.

Semiconductor integrated circuit device

An integrated circuit including latch circuits disposed on the input and output sides of an object circuit the delay time of which is to be measured, respectively, and a variable delay circuit capable of arbitrarily delaying a timing signal supplied from outside or a timing signal generated inside the integrated circuit by an instruction from outside. The timing signal and a delay signal obtained by delaying the input signal by the variable delay circuit are supplied as clock signals to the latch circuits, and the signal passing through the variable delay circuit is fed back to the input side so as to constitute an oscillation circuit, the oscillation signal of which can be outputted to outside. A signal delayed by a desired time can be automatically generated inside the semiconductor integrated circuit on the basis of this timing signal.

Semiconductor integrated circuit device having circuit inspection

Growing community of inventors

Akiruno, Japan

Sohei Omori