Quantum Motion Technologies Limited

Oxford University Innovation Ltd

Sofia Patomaki

John Morton

Michael Fogarty

Simon Schaal

Simon Benjamin

Zhenyu Cai

A device for quantum information processing is disclosed herein. According to examples, the device comprises a first plurality of confinement regions for confining spinful charge carriers for use as data qudits. The device further comprises a second plurality of confinement regions for confining spinful charge carriers for use as ancillary qudits, each confinement region of the second plurality of confinement regions couplable to measurement apparatus for measuring an ancillary qudit. The device further comprises a third plurality of confinement regions for confining spinful charge carriers, each confinement region of the third plurality of confinement regions situated between a first confinement region of the first plurality of confinement regions and a second confinement region of the second plurality of confinement regions and for use in mediating interactions between a data qudit of the first confinement region and an ancillary qudit of the second confinement region. The device further comprises one or more charge reservoirs. Each confinement region of the third plurality of confinement regions is couplable to a charge reservoir of the one or more charge reservoirs. Methods for operating a device for quantum information processing, and computer-readable media, are also described herein.

Architectures for quantum information processing

Methods are disclosed for controlling charge stability in a device for quantum information processing. According to examples, a device for quantum information processing comprises a first plurality of confinement regions confining spinful charge carriers for use as qudits. The device further comprises a second plurality of confinement regions confining spinful charge carriers, each confinement region of the second plurality of confinement regions adjacent to a confinement region of the first plurality of confinement regions. The device further comprises one or more charge reservoirs, wherein each confinement region of the second plurality of confinement regions is attachable to a charge reservoir. According to examples, a method for controlling charge stability comprises selectively tuning the relative energy levels of the first plurality of confinement regions and adjacent confinement regions of the second plurality of confinement regions such that, if a spinful charge carrier leaks from a confinement region of the first plurality of confinement regions, then the spinful charge carrier is replaced to ensure that the confinement region of the first plurality of confinement regions again contains a spinful charge carrier for use as a qudit. Control apparatus and computer-readable media are also described herein.

Control of charge carriers in quantum information processing architectures

A silicon-based quantum device is provided. The device comprises: a first metallic structure (); a second metallic structure () laterally separated from the first metallic structure; and an L-shaped elongate channel () defined by the separation between the first and second metallic structures; wherein the elongate channel has a vertex () connecting two elongate parts of the elongate channel. The device further comprises: a third metallic structure (), mediator gate, positioned in the elongate channel; a fourth metallic structure () forming a first barrier gate, arranged at a first end of the third metallic structure; and a fifth metallic structure () forming a second barrier gate arranged at a second end of the third metallic structure. The first, second, third, fourth and fifth metallic structures are configured for connection to first, second, third, fourth and fifth electric potentials respectively. The first, second, fourth and fifth electric potentials are controllable to define an electrical potential well to confine quantum charge carriers in an elongate quantum dot beneath the elongate channel. The fourth and fifth electric potentials and the position of the fourth and fifth metallic structures define first and second ends of the elongate channel respectively. The width of the electrical potential well is defined by the position of the first and second metallic structures and their corresponding electric potentials; and the length of the electrical potential well is defined by the position of the fourth and fifth metallic structures and their corresponding electric potentials. The third electric potential is controllable to adjust quantum charge carrier energy levels in the electrical potential well.

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Sofia Patomaki