Osram Opto Semiconductors Gmbh

Soenke Tautz

Alfred Lell

Christoph Eichler

Wolfgang Reill

Wolfgang Schmid

Dimitri Dini

Uwe Strauss

Clemens Vierheilig

Karsten Auen

Peter Brick

Jan Marfeld

Adrian Stefan Avramescu

Fabian Kopp

Roland Enzmann

Andreas Breidenassel

Jan Seidenfaden

Hubert Schmid

A laser component includes a housing, a laser chip arranged in the housing, and a conversion element for radiation conversion arranged in the housing wherein the conversion element is irradiatable with laser radiation of the laser chip. A method of producing such a laser component includes providing component parts of the laser component including a laser chip, a conversion element for radiation conversion and housing parts, and assembling the component parts of the laser component such that a housing is provided within which the laser chip and the conversion element are arranged, wherein the conversion element is irradiatable with laser radiation of the laser chip.

Laser component

A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.

Laser light source

A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.

A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.

A laser light source comprises, in particular, a semiconductor layer sequence () having an active region () and a radiation coupling-out area () having a first partial region () and a second partial region () different than the latter, and a filter structure (), wherein the active region () generates, during operation, coherent first electromagnetic radiation () having a first wavelength range and incoherent second electromagnetic radiation () having a second wavelength range, the coherent first electromagnetic radiation () is emitted by the first partial region () along an emission direction (), the incoherent second electromagnetic radiation () is emitted by the first partial region () and by the second partial region (), the second wavelength range comprises the first wavelength range, and the filter structure () at least partly attenuates the incoherent second electromagnetic radiation () emitted by the active region along the emission direction ().

Laser light source and method for producing a laser light source

A laser diode assembly includes a housing having a housing part and a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 3 &#x3bc;m is arranged between the laser diode chip and the mounting part.

Laser diode assembly

A radiation-emitting semiconductor component includes a semiconductor body. The semiconductor body has a semiconductor layer sequence having an active region provided for generating radiation. The semiconductor component has a waveguide, which is provided for laterally guiding the radiation generated in the active region and which extends between a mirror surface and a coupling-out surface. The waveguide meets the mirror surface perpendicularly and forms an acute angle with a normal to the coupling-out surface.

Radiation-emitting semiconductor component with a waveguide meeting a mirror surface perpendicularly and meeting a coupling-out surface obliquely

A laser diode device is specified, comprising a housing having a mounting part and a laser diode chip based on a nitride compound semiconductor material in the housing on the mounting part, wherein the laser diode chip is mounted directly on the mounting part using a solder layer, and the solder layer has a thickness of greater than or equal to 3 &#x3bc;m.

Laser diode device

A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface, and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.

A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 &#x3bc;m is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.

A laser light source including a semiconductor layer sequence having an active region and a radiation coupling-out area having a first partial region and a second partial region different than the first partial region, and a filter structure. The active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first and second partial regions. The second wavelength range includes the first wavelength range, and the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction.

A laser light source comprises, in particular, a semiconductor layer sequence () having an active layer having at least two active regions () which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence () along an emission direction (), said side area being embodied as a radiation coupling-out area (), a respective electrical contact area () above each of the at least two active regions () on a main surface () of the semiconductor layer sequence (), and a surface structure in the main surface () of the semiconductor layer sequence (), wherein the at least two active regions () are arranged in a manner spaced apart from one another in the active layer () transversely with respect to the emission direction (), each of the electrical contact areas () has a first partial region () and a second partial region () having a width that increases along the emission direction () toward the radiation coupling-out area (), the surface structure has, between the at least two electrical contact areas (), at least one first depression () along the emission direction () and also second depressions (), and the first partial regions () of the electrical contact areas () are in each case arranged between at least two second depressions ().

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Tegernheim, Germany

Soenke Tautz