Infineon Technologies Ag

Infineon Technologies Austria Ag

Soenke Pirk

Juergen Steinbrenner

Markus Kahn

Julia-Magdalena Straeussnigg

Anna-Katharina Kaiser

Alfons Dehe

Peter Irsigler

Christoph Glacer

Thomas Grille

Andre Brockmeier

Wolfgang Friza

Ursula Hedenig

Stefan Jost

Daniel Maurer

Stefan Geissler

A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.

Semiconductor device, microphone and methods for forming a semiconductor device

A MEMS device is provided. The MEMS device includes a membrane, and at least one electrode arranged at a distance from the membrane. The at least one electrode includes a layer stack. The layer stack includes a first insulation layer, a first conductive layer arranged thereabove, a second insulation layer arranged thereabove, a second conductive layer arranged thereabove, and a third insulation layer arranged thereabove.

MEMS device and method for producing a MEMS device

In various embodiments, a method for manufacturing microphone structures is provided. The method may include: Providing a substrate having a front side and a back side, the backside facing away from the front side, and having an inner area and an outer area laterally surrounding the inner area, with the inner area comprising a plurality of microphone areas each microphone are being provided for one microphone of the plurality of microphones; Forming a plurality of layers for the plurality of microphones in the microphone areas on the front side of the substrate; Forming a recess from the backside of the substrate with the recess laterally overlapping the entire inner area; Forming a plurality of cavities into a bottom of the recess with each cavity of the plurality of cavities being formed in one of the microphone areas; Processing the layers to form the plurality of microphone structures, wherein each microphone structure comprises at least one layer of the plurality of layers and one cavity; and Separating the plurality of microphone structures from each other.

Method for manufacturing a plurality of microphone structures, microphone and mobile device

A method for manufacturing a MEMS device includes providing a cavity within a layer adjacent to a sacrificial layer. The cavity extends to the sacrificial layer and includes a capillary slot protruding into the layer. The sacrificial layer is removed by exposing the sacrificial layer to an etching agent that is introduced through the cavity.

Method for manufacturing a MEMS device and MEMS device

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Villach, Austria

Soenke Pirk