Skhynix Inc.

So Yoon Kim

Duck Hwa Hong

Sang Hyun Ku

Do Hong Kim

Min Ho Seok

A memory device includes a plurality of word lines; and a row control circuit configured to: drive, in response to a precharge command, a selected word line of the word lines such that a voltage level of the selected word line decreases from a first voltage level to a second voltage level during a first section, stays at the second voltage level during a second section and decreases from the second voltage level to a third voltage level during a third section, and keep the second section at a preset time amount, or change the second section to a time amount defined by an input of an active command according to a mode control signal.

Memory device performing precharge operation, and operating method thereof

A memory includes: a plurality of word lines; and a row circuit configured to: activate at least one word line among the word lines to an active voltage level during an active operation and discharge the activated word line during a precharge operation; and discharge the word line from the active voltage level to a precharge voltage level in different manners during the precharge operation in response to a precharge command and during the precharge operation during a refresh operation.

Growing community of inventors

Gyeonggi-do, South Korea

So Yoon Kim