Panasonic Intellectual Property Management Co., Ltd.

Oki Electric Industry Co., Ltd.

Hitachi, Ltd.

Panasonic I-Pro Sensing Solutions Co., Ltd.

So Suzuki

Mikio Morioka

Takamitsu Arai

Hideyuki Yoshida

Takahiro Yoshimura

Masao Watanabe

Takao Koishi

Masaomi Iiizumi

Masaru Furujiku

Takuya Kitahara

Ai Nanno

Hiroyuki Matsumoto

Takashi Koyama

Katsuhiro Kitade

Takashi Tsukahara

Keiji Yuyama

Hiroshi Hayakawa

Soichiro Katayama

Masaomi Iizumi

Handle for portable computer

Portable computer

Disclosed is an evaluation system for evaluating a resource operation of an information system by a user. The evaluation system includes one or more arithmetic units, and one or more storage devices. The one or more storage devices are configured to store risk management information for managing an erroneous operation risk evaluation index relating to the resource operation of the information system. The one or more arithmetic units are configured to: receive operation information indicating a first resource operation designated by a first user, and evaluate an erroneous operation risk of the first resource operation based on the first resource operation and the risk management information.

Evaluation system for evaluating resource operation of information system by user

An investigation assist device includes a processor and a storage that records road map information including a plurality of intersections and captured video of each of the cameras in association with camera information and intersection information. The processor retrieves a vehicle based on the captured video of each of the cameras installed at one or more intersections within a predetermined distance range from the intersection where the event has occurred, based on input information including date and time information when the event has occurred, the intersection information where the event has occurred, and feature information of the vehicle having caused the event. The processor updates detection date and time information of the vehicle from reception date and time information on a report indicating an occurrence of the event to detection date and time information of the vehicle.

Investigation assist device, investigation assist method and investigation assist system

Projector

An investigation assist device is connected to cameras installed at a plurality of intersections respectively. The investigation assist device has a processor and a storage that records road map information including the plurality of intersections and captured video of each camera in association with camera information and intersection information. The processor extracts camera information of intersections adjacent to a first point where an event occurred according to an information input including information on the first point and feature information of a vehicle having caused the event. The processor retrieves a vehicle satisfying the feature information of the vehicle using a captured video of a camera specified by the extracted camera information. The processor analyzes feature information of the retrieved vehicle. The processor updates feature information of the vehicle by adding the analyzed feature information of the vehicle to the feature information of the vehicle input by the information input, and stores the updated information in the storage. The processor updates detection point information of the vehicle from the information on the first point into detection point information of the retrieved vehicle, and stores the updated information in the storage.

An investigation assist system includes an investigation assist device that acquires captured video of cameras installed at a plurality of intersections respectively; and an operator terminal that is connected to the investigation assist device so as to communicate with the investigation assist device. The investigation assist device detects an occurrence of an event at a first point based on the acquired captured video of the camera, and transmits the captured video of the camera to the operator terminal, the captured video being acquired at a time when the event is detected. The operator terminal records the captured video of the camera transmitted from the investigation assist device, and transmits report contents information based on the report indicating the occurrence of the event to the investigation assist device. The investigation assist device extracts a captured video satisfying the report contents information transmitted from the operator terminal, and transmits the extracted video to the investigation assist device. The operator terminal displays the captured video transmitted from the investigation assist device on the display.

Investigation assist system and investigation assist method

An investigation assist device is connected to cameras installed at a plurality of intersections respectively so as to communicate with the cameras. The investigation assist device includes a processor and a storage that records road map information including the plurality of intersections and captured video of each of the cameras in association with camera information and intersection information. The processor retrieves a vehicle using the captured video of each of the cameras installed at one or more intersections within a predetermined distance range from the intersection where the event has occurred, based on input information including date and time information when the event has occurred, the intersection information where the event has occurred, and the feature information of the vehicle having caused the event, the captured videos corresponding to the date and time information. The processor updates the detection date and time information of the vehicle from reception date and time information on a report indicating an occurrence of the event to detection date and time information of the vehicle, updates detection point information of the vehicle from the intersection information on the intersection where the event has occurred to intersection information on another intersection where the vehicle is detected, and stores the updated information in the storage.

This invention provides a semiconductor device manufacturing method including forming a T type gate electrode having a wide region in an upper portion, the method including steps of: forming rectangular gate polysilicon; forming a nitride film covering the polysilicon; forming an oxide film thick on the nitride film; etching back the oxide film to expose the nitride film; etching the exposed nitride film, exposing the gate polysilicon, and forming a space; forming undoped polysilicon burying the space; etching back the undoped polysilicon to form a wide portion in the upper portion of the gate polysilicon; and etching the oxide film and the nitride film; siliciding the wide undoped silicon to form titanium silicide (or cobalt silicide). This manufacturing method makes it possible to easily form the T type gate electrode with good yield.

Manufacturing method for semiconductor device having a T type gate electrode

This invention provides a semiconductor device manufacturing method including forming a T type gate electrode having a wide region in an upper portion, the method including steps of: forming rectangular gate polysilicon; forming a nitride film covering the polysilicon; forming an oxide film thick on the nitride film; etching back the oxide film to expose the nitride film; etching the exposed nitride film, exposing the gate polysilicon, and forming a space; forming undoped polysilicon burying the space; etching back the undoped polysilicon to form a wide portion in the upper portion of the gate polysilicon; and etching the oxide film and the nitride film; siliciding the wide undoped silicon to form titanium suicide (or cobalt silicide). This manufacturing method makes it possible to easily form the T type gate electrode with good yield.

Manufacturing method for semiconductor device having a T-type gate electrode

In a method of manufacturing a capacitor, a semiconductor substrate is provided. On the semiconductor substrate, a transistor is formed. Then, a first conductive layer is formed on the substrate. An insulating layer is formed on the first conductive layer. A second conductive layer is formed on the insulating layer. The second conductive layer is patterned to form an upper electrode. Finally, the first conductive layer is patterned to form a lower electrode and a conductive pattern after the formation of the upper electrode.

Method of manufacturing semiconductor device

Growing community of inventors

Tokyo, Japan

So Suzuki