Samsung Electronics Co., Ltd.

So-ra You

Mirco Cantoro

Tae-yong Kwon

Cheol Kyu Kim

Do-hyoung Kim

Yong-Joon Choi

Seung-mo Ha

Jae-young Park

Dong-hoon Khang

Seung-Jin Mun

Han-ki Lee

Chang-Jae Yang

Woong-ki Hong

Woo-Ram Kim

Dong-hoon Hwang

Seong-Ju Kim

An integrated circuit device as provided herein may include a device region and an inter-device isolation region. Within the device region, a fin-type active region may protrude from a substrate, and opposite sidewalls of the fin-type active region may be covered by an inner isolation layer. An outer isolation layer may fill an outer deep trench in the inter-device isolation region. The inner isolation layer may extend away from the device region at an inner sidewall of the outer deep trench and into the inter-device isolation region. There may be multiple fin-type active regions, and trenches therebetween. The outer deep trench and the trenches between the plurality of fin-type active regions may be of different heights. The integrated circuit device and methods of manufacturing described herein may reduce a possibility that various defects or failures may occur due to an unnecessary fin-type active region remaining around the device region.

Integrated circuit devices having inter-device isolation regions and methods of manufacturing the same

A semiconductor device includes a compound semiconductor layer, where the compound semiconductor layer includes separate fin patterns in separate regions. The separate fin patterns may include different materials. The separate fin patterns may include different dimensions, including one or more of width and height of one or more portions of the fin patterns. The separate fin patterns may include an upper pattern and a lower pattern. The upper pattern and the lower pattern may include different materials. The upper pattern and the lower pattern may include different dimensions. Separate regions may include separate ones of an NMOS or a PMOS. The semiconductor device may include gate electrodes on the compound semiconductor layer. Separate gate electrodes may intersect the separate fin patterns.

Semiconductor device

Growing community of inventors

Cheonan-si, South Korea

So-ra You