Seoul Viosys Co., Ltd.

Cj Cheiljedang Corporation

Seoul Opto Device Co., Ltd.

So Ra Lee

Seung Pyo Lee

Jin Woong Yang

Ha Na Park

Hyun Kyung Noh

Jong Kyu Kim

Chung Hoon Lee

Jin Cheol Shin

Sum Geun Lee

Sang Ki Jin

Kang Kook Lee

Yeo Jin Yoon

Dae Sung Cho

Yu Jin Kim

Jong Hyeon Chae

Kyung Hee Ye

Chae Hon Kim

Jae Kwon Kim

Chang Yeon Kim

Yong Hyun Baek

Ji Hun Kang

Ji Hoon Park

Sung Su Son

Ju Yong Park

Min Woo Kang

Yul Joong Kim

Hyun A Kim

Seom Geun Lee

Joon Sup Lee

Se Hee Oh

Myoung Hak Yang

Hyoung Jin Lim

Hyun Ju Lee

Hyun Haeng Lee

Ho Jun Suk

Jong Min Jang

Jun Hee Lee

Won Cheol Seo

Dae Sung Kal

Mi Na Jang

Jang Woo Lee

Doo Yeon Kim

Mi Hee Lee

Dae Hong Min

Min Chan Heo

Jae Hye Jung

Jin Cheoul Shin

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer disposed on the n-type nitride semiconductor layer and having V-pits, an active layer disposed on the V-pit generation layer and including a first well region formed along a flat surface of the V-pit generation layer and a second well region formed in the V-pit of the V-pit generation layer, a p-type nitride semiconductor layer disposed on the active layer and a sub-emission layer interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and disposed near the active layer. The sub-emission layer may emit light having a peak wavelength within a range of wavelengths shorter than a peak wavelength of the first well region, and light emitted from the light emitting diode is within a range of 0.205≤X≤0.495 and 0.265≤Y≤0.450 in CIE color coordinates (X, Y).

Single chip multi band light emitting diode, light emitting device and light emitting module having the same

A light emitting device includes a short wavelength light emitting portion, a long wavelength light emitting portion, and a coupling layer combining the short wavelength emitting portion and the long wavelength light emitting portion. Each of the short wavelength light emitting portion and the long wavelength light emitting portion includes a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer of the long wavelength light emitting portion contains more Indium (In) than the active layer of the short wavelength light emitting portion, and the short wavelength light emitting portion emits light of a shorter wavelength than that of light emitted from the long wavelength light emitting portion.

Multi wavelength light emitting device and method of fabricating the same

A light emitting module including a circuit substrate and light emitters arranged side by side thereon. A first light emitter can include a first layer stack, a second light emitter includes a second layer stack, and a third light emitter includes a third layer stack, and each stack can include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. A light transparent layer can be configured to transmit light emitter by the first, second, and third light emitters, and a reflector including a white material can be located adjacent to the first, second, and third light emitters. A stack direction in each of the first, the second and the third light emitters is not perpendicular to an upper surface of the light transparent layer.

Light emitting module

A display apparatus includes a display substrate, and light emitting devices arranged on an upper surface of the display substrate. At least one of the light emitting devices includes a first LED unit including a first light emitting stack, a second LED unit including a second light emitting stack, and a third LED unit including a third light emitting stack. Each of the first to third light emitting stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. the first conductivity type semiconductor layer and the second conductivity type semiconductor layer in each of the first to third light emitting stacks are stacked in a horizontal direction with respect to the upper surface of the display substrate. At least one of the second conductivity type semiconductor layers in the first to third light emitting stacks is divided into two regions.

Light emitting device and LED display apparatus including the same

A light emitting device for a display including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and having a side surface exposing the active layer, in which a portion of the second conductivity type semiconductor layer and the active layer along an edge of the light emitting structure is insulative in a thickness direction to define an insulation region, and the insulation region includes implanted ions.

Light emitting device for display and unit pixel having the same

A lighting apparatus includes a light emitting diode, in which the light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The light emitting diode emits light that varies from yellow light to white light depending on a driving current.

Single chip multi band LED and application thereof

Container for food packing

Bag for packaging

A display apparatus includes a display substrate, and light emitting devices arranged on an upper surface of the display substrate. At least one of the light emitting devices includes a first LED unit including a first light emitting stack, a second LED unit including a second light emitting stack, and a third LED unit including a third light emitting stack. The second LED unit is disposed between the first LED unit and the third LED unit. Each of the first to third light emitting stacks includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer in each of the first to third light emitting stacks are stacked in a horizontal direction with respect to the upper surface of the display substrate.

A display apparatus is provided. The display apparatus includes a display substrate, a first micro LED module disposed on the display substrate, and a second micro LED module disposed on the display substrate and adjacent to the first micro LED module. The first micro LED module and the second micro LED module have side surfaces facing each other. The side surfaces facing each other of the first micro LED module and the second micro LED module are inclined in an identical direction with respect to an upper surface of the display substrate.

LED display apparatus having micro LED module

A display apparatus includes a display substrate, first micro LED modules arranged on the display substrate, and at least one second micro LED module disposed between the first micro LED modules. Each of the first micro LED modules includes a first substrate, and micro LEDs disposed on the first substrate, the second micro LED module includes a second substrate, and micro LEDs disposed on the second substrate. The first substrate includes a lower body and a top plate located on the lower body. The lower body is recessed from an edge of the top plate, and the second micro LED module is disposed between recessed lower bodies of adjacent first micro LED modules.

Growing community of inventors

Ansan-si, South Korea

So Ra Lee