Gm Global Technolgoy Operations, Inc.

Advanced Technology Materials, Inc.

Ovonyx Inc.

Smuruthi Kamepalli

Thomas H Baum

Balasubramanian Lakshmanan

Stanford R Ovshinsky

Elizabeth Dicocco

A fuel cell flow field plate includes an aluminum substrate plate having a first side and a second side wherein the first side of the aluminum substrate plate defines a plurality of channels for transporting a first fuel cell reactant gas. The flow field plate also includes a first metal interlayer deposited on the first side of the aluminum substrate plate, a second metal interlayer deposited on the second side of the aluminum substrate plate, a first amorphous carbon layer deposited on the first metal interlayer, and a second amorphous carbon layer deposited on the second metal interlayer. The first amorphous carbon layer and second amorphous carbon layer each independently have a density greater than or equal to 1.2 g/cc.

Coated aluminum bipolar plate for fuel cell applications

A method for manufacturing a coated metal substrate includes the steps of: (1) inserting a substrate with a chromium(III) oxide layer inside a CVD chamber; (2) heating the substrate to a temperature which falls in the range of 400 to 500 degrees Celsius; (3) transporting gaseous nitrogen (N) and tantalum chloride (TaCl5) into the CVD chamber for at least two cycles; (4) ceasing the transportation of tantalum chloride (TaCl5) while nitrogen continues to flow from the inlet to the outlet; (5) reacting the tantalum chloride and the chromium(III) oxide and creating by-products; and (6) vacuuming the by-product matter from the CVD chamber via the flowing nitrogen gas.

Method for manufacturing and cleaning a stainless steel fuel cell bipolar plate

A chemical vapor deposition (CVD) process for preparing electrical and optical chalcogenide materials. In a preferred embodiment, the instant CVD-deposited materials exhibit one or more of the following properties: electrical switching, accumulation, setting, reversible multistate behavior, resetting, cognitive functionality, and reversible amorphous-crystalline transformations. In one embodiment, a multilayer structure, including at least one layer containing a chalcogen element, is deposited by CVD and subjected to post-deposition application of energy to produce a chalcogenide material having properties in accordance with the instant invention. In another embodiment, a single layer chalcogenide material having properties in accordance with the instant invention is formed from a CVD deposition process including three or more deposition precursors, at least one of which is a chalcogen element precursor. Preferred materials are those that include the chalcogen Te along with Ge and/or Sb.

Chemical vapor deposition of chalcogenide materials via alternating layers

Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

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Rochester, MI, United States of America

Smuruthi Kamepalli