Lam Research Corporation

Sm Rega Sadjadi

Sean S Kang

Bi-Ming Yen

Siyi Li

Scott Briggs

Tri Le

The invention is a method of etching an integrated circuit (IC) structure that includes a metal hard mask layer. The etching of the metal hard mask layer is performed by first feeding a gas mixture comprising a fluorine containing gas and oxygen (O) gas to a reactor. The method then proceeds to generate a plasma that etches the metal hard mask layer. The method can be applied to either performing a via etch or a trench etch. Additionally, the invention teaches the removal of a photoresist layer without affecting the metal hard mask layer.

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Saratoga, CA, United States of America

Sm Rega Sadjadi