International Rectifier Corporation

Siliconix Technology C. V.

Slawomir Skocki

Hazel Deborah Schofield

Philip Adamson

A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for surface mounting of the package on a circuit board.

Chip-scale Schottky device

A flip chip Schottky die is provided, which includes three contact bumps extending from a top surface of the die for electrically connecting with a board, a first and second bump being cathode contacts, and a third bump being an anode contact and having a larger surface than each of the first and second bumps for a 0.5 ampere device. Each bump is substantially rectangular at its base, but may have a curved or arched top surface on a square die. Also, provided is a contact bump useful in a flip chip device, such as a MOSFET or diode for a current of 1.0 amperes that includes a solder body of PbSn or a solder body free of lead comprising SnAgCu. Such a contact bump is substantially rectangular, and a height of approximately 120 &#x3bc;m.

Contact pad structure for flip chip semiconductor die

Chip-scale schottky device

A composite field ring for a Schottky diode has a low concentration deep portion to increase breakdown voltage withstand and a high concentration, shallow region to enable minority carrier injection during high forward current conduction. The composite ring permits a reduction in the thickness of the epitaxially formed layer which receives the Schottky barrier metal.

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Turin, Italy

Slawomir Skocki