Abb Schweiz Ag

Hitachi Energy Ltd

Abb Research Ltd.

Hitachi Energy Switzerland Ag

Abb Technology Ltd

Abb Power Grids Switzerland Ag

Slavo Kicin

Fabian Mohn

Didier Cottet

Juergen Schuderer

Gernot Riedel

Daniel Kearney

Arne Schroeder

Giovanni Salvatore

Munaf Rahimo

Bruno Agostini

Thomas Gradinger

Francesco Agostini

Samuel Hartmann

Jürgen Häfner

Jürgen Schuderer

Chunlei Liu

Felix Traub

Franziska Brem

Berk Yesin

Raffael Schnell

Andrey Petrov

Christoph Haederli

Hamit Duran

Nicola Schulz

Liliana Duarte

Farhad Yaghoubi

Amina Hamidi

Jan-Henning Fabian

In one embodiment, a power module device includes a base plate, an electrically insulating ceramic layer on the base plate, and an electrically insulating first insulating layer on the ceramic layer. The first insulating layer includes a prepreg material. An electrically conductive lead frame is disposed on the first insulating layer and electrically insulated therefrom. A power semiconductor device disposed on the lead frame and embedded between the lead frame and a second insulating layer.

Power module device with an embedded power semiconductor device

A power semiconductor module includes a plurality of semiconductor switches arranged in a plurality of groups. Each semiconductor switch has a first terminal and a second terminal having a controlled path therebetween and a control terminal. A plurality of first group contacts are each connected to the first terminals of the semiconductor switches of a respective group and a plurality of second group contacts are each connected to the second terminals of the semiconductor switches of the respective group. A plurality of control group contacts are each connected to the control terminals of the semiconductor switches of the respective group. An interconnection bridge connects the control group contacts and the first group contacts of the plurality of groups. The interconnection bridge has a layer structure with a first conductive layer and a second conductive layer being separated by an insulating layer.

Power semiconductor module

A power semiconductor module includes a main substrate and power semiconductor chips. Each power semiconductor chip is bonded to the main conductive layer with the first power electrode. A first group of the power semiconductor chips is connected in parallel via the second power electrodes and a second group of the power semiconductor chips is connected in parallel via the second power electrodes. The module also includes a first insulation layer and a first conductive layer overlying the first insulation layer as well as a second insulation layer and a second conductive layer overlying the second insulation layer. The first conductive layer provides a first gate conductor area and a first auxiliary emitter conductor area for the first group. The second conductive layer provides a second gate conductor area and a second auxiliary emitter conductor area for the second group.

Power semiconductor module with low inductance gate crossing

A power semiconductor module comprises abase plate (); a semiconductor chip () disposed on and in contact with a top surface of the base plate (), a preform () disposed on and in contact with a top surface of the semiconductor chip (); and a pressing element () in contact with and applying a pressure onto a top surface of the preform (). The preform () comprises a first electrically conductive layer () and a second electrically conductive layer (). The first electrically conductive layer () has at least one protrusion () protruding towards the top surface of the semiconductor chip () and defining a recess () in the first electrically conductive layer () of the preform (), wherein the recess () may annularly surround the protrusion (). The at least one protrusion () is made from the same material as the first electrically conducting layer () and integrally formed with it or the first electrically conducting layer () and the at least one protrusion () are made from different materials. At least a portion of the second electrically conductive layer () is positioned in the recess () and on the top surface of the semiconductor chip (). The material of the at least one protrusion () has a higher melting point than the material of the second electrically conductive layer (). The power semiconductor module is configured so that in an event of semiconductor chip failure with heat dissipation, the protrusion () of the first electrically conductive layer () penetrates through residual material () of the semiconductor chip () upon pressure applied by the pressing element () towards the base plate () so as to establish a contact between the protrusion () of the first electrically conductive layer () and the base plate () and form a short circuit bridging the defective semiconductor chip () in a short circuit failure mode. The bottom surface of the preform () may be formed by a bottom surface of the second electrically conductive layer () alone or by a bottom surface of the second electrically conductive layer () and a bottom surface of the protrusion ().

Hybrid short circuit failure mode preform for power semiconductor devices

A solid state switching device, such as a solid state circuit breaker, includes at least one heat sink, a control electronics printed circuit board (PCB), and power electronics. The power electronics are useful to regulate the flow of current from one terminal of the solid state switching device to another terminal. The power electronics can include one or more solid state devices such as FETs, Thyristors, Thyristors+SiC JFET in parallel, IGBTs, and IGCTs. The control PCB can include a variety of circuit elements useful to perform the function of a gate driver useful to activate the solid state device of the power electronics. The heat sink includes one or more signal vias formed therethrough to permit nesting of the control PCB within the heat sink.

Solid state switching device including nested control electronics

Systems, methods, techniques and apparatuses of power switches are disclosed. One exemplary embodiment is a power switch comprising an outer housing; a power electronics board disposed within the housing and including a semiconductor switch structured to selectively conduct a current between a first power terminal and a second power terminal; a first heat sink coupled to the power electronics board; a plurality of thermally conductive connectors; a second heat sink coupled to the plurality of thermally conductive connectors, a control electronics board structured to control the semiconductor switch, the control electronics board being located within an enclosure formed of the second heat sink, the plurality of thermally conductive connectors, and the power electronics board.

Heat dissipation for power switches

An electronics package includes an electrically conducting support layer; at least one electrically conducting outer layer; at least two power electronics components arranged on different sides of the support layer and electrically interconnected with the support layer and with the at least one outer layer; and isolation material, in which the support layer and the at least two power electronics components are embedded, the support layer and the at least one outer layer are laminated together with the isolation material; and a cooling channel for conducting a cooling fluid through the electronics package, the cooling channel runs between the at least two power electronics components through the support layer.

Cooled electronics package with stacked power electronics components

The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane. The first plane is spaced apart from the second plane in a direction normal to the first plane, whereby the first substrate is based on a direct bonded copper substrate and the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a layer of a printed circuit board is provided for carrying the diode. Alternatively, the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a foil is provided for carrying the diode, wherein the foil comprises an electrically insulating main body and an electrically conductive structure provided thereon for carrying the diode. Such a power semiconductor module provides a low stray inductance and/or may be built easily.

A semiconductor module comprises a semiconductor chip comprising a semiconductor switch having a collector, emitter and gate, a collector terminal connected to the collector, gate terminal connected to the gate, an emitter terminal connected to the emitter via an emitter conductor path having an emitter inductance, an auxiliary emitter terminal connected to the emitter, a first conductor path connected to the emitter, and a second conductor path connected to the emitter having a different mutually inductive coupling with the emitter conductor path as the first conductor path. The first conductor path and the second conductor path are connectable to the auxiliary emitter terminal and/or the first conductor path is connected to the auxiliary emitter terminal and the second conductor path is connected to a second auxiliary emitter terminal. The semiconductor switch is an IGBT and each of the first conductor path and the second conductor path comprises bridging points for connecting the respective conductor path to the auxiliary emitter terminal.

Semiconductor module with two auxiliary emitter conductor paths

An electric converter system, including a housing configured to receive a dielectric fluid, at least two electric modules, each including a first space and a second space, the first space including a connecting portion and a cooling system configured to circulate the dielectric fluid to cool the electric modules. The converter system further includes an inter module bus bar portion including a complementary connecting portion, whereby the connecting portion is configured to be connected to the complementary connecting portion of the inter module bus bar portion, whereby the inter module bus bar portion is configured to interconnect one of the at least two electric modules with the other of the at least two electric modules, said one electric module being proximate to said other electric module, and whereby the connecting portion, the first space and the second space of each electric module are arranged in series.

Electric converter with compact module arrangement for subsea applications

A semiconductor device which provides a small and simple design with efficient cooling. A first electrically conducting cooling element is in contact with first electrodes of semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the first electrodes of the semiconductor elements to an external apparatus. A second electrically conducting cooling element is in contact with second electrodes of the semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the second electrodes of the semiconductor elements to an external apparatus. The semiconductor device includes an interface which is electrically connected to gates of the semiconductor elements for external control of respective states of the semiconductor elements.

Semiconductor device

A power-electronic arrangement comprising semiconductor components (), a heat exchanger (), and an electrically conductive element () is presented. The heat exchanger comprises evaporator channels () and condenser channels () for working fluid. The electrically conductive element comprises a contact surface providing a thermal contact to outer surfaces of walls of the evaporator channels for transferring heat from the electrically conductive element to the evaporator channels. A main current terminal of each semiconductor component is bonded to the electrically conductive element which thus forms a part of a main current circuitry of a power system. As the main current terminal is directly bonded to the electrically conductive element cooled with the heat exchanger, the temperature gradients inside the semiconductor components can be kept moderate, and thus the temperatures inside the semiconductor components can be limited.

Growing community of inventors

Zurich, Switzerland

Slavo Kicin