Gte Products Corporation

Gte Sylvania Incorporated

Sixdeniel Faria

Vincent Chiola

Ronald E Karam

Lyle K Williams

A cadmium carbonate/cadmium sulfide photoconductor is made by mixing solutions containing carbonate, cadmium and copper ions to form CdCO.sub.3 :Cu precipitate which is subsequently converted to CdCO.sub.3 /CdS:Cu by bubbling hydrogen sulfide gas through a hot aqueous suspension of the CdCO.sub.3 :Cu precipitate.

Cadmium carbonate/cadmium sulfide photoconductor

An infrared responsive cadmium selenide photoconductor is prepared by blending cadmium selenide, copper-containing cadmium selenide mix and cadmium chloride, and then firing the blend at 425.degree. C.

Infrared cadmium selenide photoconductor and process of making same

A copper activated photoconductor is disclosed having reduced photosensitivity and the general formula X:Cu wherein X is selected from the group consisting of CdS, CdSe, and Cd(S,Se), and an iron content of from about 0.01% to about 0.05% by weight the presence of which reduces the photosensitivity of the photoconductor by about 30%. A process is disclosed for reducing the photosensitivity of a photoconductor. The process involves forming a relatively uniform admixture consisting essentially of copper, iron, the copper and iron being added in amounts which result in a copper level of from about 0.01% to about 0.09% and an iron content of from about 0.01% to about 0.05% by weight in the final reduced photosensitive photoconductor, from about 3% to about 10% cadmium chloride, from about 2% to about 30% by weight Y wherein Y is selected from the group consisting of S, Se, and mixtures thereof, and the balance being the photoconductor having the formula X:Cu with X as described above, and wherein Y is the same as the anionic composition of the photoconductor. The admixture is heated at a sufficient temperature for a sufficient time to form a reduced photosensitive photoconductor material which is cooled under nitrogen to ambient temperature. The portion of the material having an average particle size no greater than about 3 microns is separated from the balance of the material, washed with water to remove any water soluble impurities and dried to form the final reduced photosensitive photoconductor.

Photoconductors of reduced photosensitivity and process for producing

A CdS:Cu,Cl electrophotographic material suitable for use in the xerographic mode, contains 200 to 300 ppm Cu, 0.02 to 0.06 percent Cl, and has very good contrast voltage.

Electrophotographic copper doped cadmium sulfide material and method of

A photoreceptor device comprises a conductive substrate and an electrophotographic layer thereon. The electrophotographic layer comprises copper-chlorine activated cadmium sulfide blended with a light-absorbing material.

Cadmium sulfide photoconductor blended with light-absorbing material

A copper-activated mercury-containing cadmium selenide telluride infrared-responsive photoconductor.

Infrared photoconductor for electrophotography of a copper activated

A composition consisting essentially of discrete particles of cadmium sulfide that are relatively free of anionic, cationic and volatile impurities has an average particle size of from about 8 to about 25 micrometers and a bulk density of from about 1.7 to about 1.9 grams per cubic centimeter and has superior properties for use in solar energy applications. The composition is prepared by forming a finely-divided impure cadmium sulfide by chemical precipitation, heating the resulting precipitate to an intermediate temperature in a flow of an inert gas, heating the material at an elevated temperature in a flowing sulfide atmosphere selected from hydrogen sulfide and carbon disulfide and cooling the heated material in a sulfide atmosphere to about the intermediate temperature and cooling to ambient temperature in an inert gas.

Solar energy grade cadmium sulfide

An electrophotoconductive material having the molecular formula: Cd(S.sub.x Se.sub.1-x):yCu.zCl is improved by controlling x in the range of from about 0.95 to about 0.98, y from about 0.0001 to about 0.001 and z is from about 0.001 to about 0.0015. The materials also have a relatively narrow particle size distribution and a relatively fine particle size and the surfaces relatively free of p-type copper sulfide. The improved materials exhibit and maintain a large differential between the image voltage and the background voltage of in excess of 800 volts when the material is used as an electrophotoconductive layer in a photosensitive member of equipment used in electrophotograhic copying processes. The photosensitive member consisting essentially of a conductive base, and electrophotoconductive layer of from about 40 to 60 micrometers overlaying the base consisting of the foregoing electrophotoconductive material and an insulating layer of from about 20 to 40 micrometers overlaying the electrophotoconductive layer exhibits improved contrast properties and a longer life than prior art members when used in an electrophotographic reproduction process.

Electrophotoconductive Cd S Se materials with Cu and Cl

A fluorescent screen is disclosed which comprises a plastic film support layer, a reflectance layer of vacuum-deposited aluminum on said support layer, and a layer of fluorescent material dispersed in an organic polymeric binder located on said reflectance layer. A method for making the above screen is also disclosed.

Fluorescent screen and method of making

A calcium tungstate X-ray phosphor is disclosed which consists essentially of a calcium tungstate host and from about 50 to about 200 parts per million, based upon the weight of the host, of vanadium as a dopant. The disclosed phosphor exhibits no detectable lag or persistence and is appreciably brighter than prior X-ray phosphors. A process for producing the phosphor is also disclosed which process comprises forming an aqueous reaction media of a water-soluble calcium source and a water-soluble tungstate source having an excess of calcium, maintaining a temperature of above about 80.degree.C for a time sufficient to form solid calcium tungstate having a stoichiometric excess of calcium, separating the solid calcium tungstate, adding from about 50 to 200 ppm of a vanadium source and a fluxing material, heating said calcium tungstate to a temperature of between about 700.degree.C and 1150.degree.C for a sufficient time to form a phosphor composition and washing the phosphor with sufficient water to remove any residual water soluble contaminants. An optional process is to add, in addition to the vanadium source, from about 0.05% to about 1.0%, based upon the weight of the host, of tungsten trioxide.

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Towanda, PA, United States of America

Sixdeniel Faria