Intel Corporation

Sivakumar Mudanai

Rafael Rios

Kelin J Kuhn

Annalisa Cappellani

Titash Rakshit

Bryan K Casper

Eyal Fayneh

Frank Patrick O'Mahony

Farag Fattouh

Wei-kai Shih

Haydar Kutuk

A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.

Junctionless accumulation-mode devices on decoupled prominent architectures

A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconductive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.

Junctionless accumulation-mode devices on prominent architectures, and methods of making same

In general, in one aspect, the disclosure describes a simulator for emulating various types of device noise in time-domain circuit simulations. The simulator is capable of adding noise to transistors as well as passive elements like resistors. The simulator utilizes at least one current source in parallel to a device to emulate the noise. The current source generates a random current output to emulate the device noise based on a random Gaussian number and the standard deviation of the device noise. The noise standard deviation can be determined based on the noise power spectral density of the device having a particular bias at that simulation time and the update time. The simulator is capable of emulating any noise source with a constant or monotonically decreasing noise spectrum (e.g., thermal noise, flicker noise) by utilizing multiple current sources having different update steps. The simulator is compatible with standard circuit simulators.

Time-domain device noise simulator

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Hillsboro, OR, United States of America

Sivakumar Mudanai