Globalfoundries U.S. Inc.

Siva R Dangeti

Sunil Kumar Singh

Dewei Xu

Seung-Yeop Kook

Embodiments of the disclosure provide a capacitor structure for an integrated circuit (IC), and methods to form the capacitor structure. The capacitor structure may include: a first ring electrode in an inter-level dielectric (ILD) layer on a substrate; an inner electrode positioned within the first ring electrode; and a capacitor dielectric separating the first ring electrode and the inner electrode, and separating a bottom surface of the inner electrode from the ILD layer.

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Rexford, NY, United States of America

Siva R Dangeti