Texas Instruments Corporation

Siva Kumar Sudani

Srinivas Kumar Pulijala

Vadim Valerievich Ivanov

Jerry Doorenbos

YuGuo Wang

Bharath Karthik Vasan

In an example, a device includes a semiconductor substrate having a top surface. The device also includes a P-doped well formed in the semiconductor substrate and extending downwardly from the top surface. The device includes a cathode of a diode formed by an N-doped region in the P-doped well. The device also includes an anode of the diode formed by a P-doped region, the P-doped region spaced away from the N-doped region in the P-doped well. The device includes a deep N-type buried layer (DNBL) formed in the semiconductor substrate, the P-doped well formed between the top surface and the DNBL. The device also includes an N-doped well extending from the top surface to the DNBL.

Ultra-low leakage diodes used for low input bias current

A voltage regulator includes a first transistor including a first terminal to receive an input voltage and a second transistor including a first terminal coupled to a second terminal of the first transistor. A charge pump couples to the second transistor and to an output voltage node. An amplifier receives a feedback voltage derived from the output voltage and generates a control signal to gates of the transistors. Responsive to the input voltage being more than a threshold larger than the output voltage, the amplifier maintains the second transistor off and the first transistor on such that current flows through the first transistor to the output voltage node but not the second transistor. Responsive to the input voltage being less than the threshold amount, the amplifier operates the first transistor in a triode mode and turns on the second transistor to provide current to the charge pump.

Input dependent voltage regulator with a charge pump

Voltage regulator for a low dropout operational mode

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Tucson, AZ, United States of America

Siva Kumar Sudani