Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Siquan Wu

Xinjie Zhang

Hao Chen

Wei He

Wenlong Xiao

A mask plate is provided according to the present disclosure. The mask plate includes: a fully-transparent region; a fully-opaque region; and a partially-transparent region at a boundary between the fully-transparent region and the fully-opaque region.

Mask plate

A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated from each other. The third electrode is arranged below and insulated from the first and second electrodes. The first electrode comprises at least one first conducting part. The second electrode comprises second conducting parts, each of which is arranged adjacent with each first conducting part. The third electrode is provided with an opening part at least partially overlapping with the first or second conducting part. If the first or second conducting part is subject to a channel defect due to short circuit, the first or second conducting part is cut off at an overlapping position with the opening part, to repair the channel defect without affecting the third electrode. A GOA circuit, a display substrate and a display device are further disclosed.

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Beijing, China

Siquan Wu