Applied Materials, Inc.

Mattson Technology, Inc

Beijing E-Town Semiconductor Technology, Co., Ltd

Sio On Lo

Joseph Frederick Sommers

Yukari Nishimura

Michael Xiaoxuan Yang

Hua Chung

Chun Yan

Samantha S H Tan

Jianqi Wang

William Ming-ye Lu

Anbei Jiang

Tsai Wen Sung

Rajan Balesan

Liyuan Bao

William Ming-Ye Lu

Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.

Silicon mandrel etch after native oxide punch-through

A processing chamber component and method for fabricating the same are provided. The processing chamber component is fabricated in the manner described herein and includes the creation of at least a macro texture on a surface of the chamber component. The macro texture is defined by a plurality of engineered features arranged in a predefined orientation on the surface of the chamber component. In some embodiments, the engineered features prevent formation of a line of sight surface defined between the features to enhance retention of films deposited on the chamber component.

Geometries and patterns for surface texturing to increase deposition retention

Non-metallic deposits are selectively removed from aluminum containing substrates such as aluminum faceplates using a selective deposition removal (SDR) solution. The SDR solution does not substantially etch the faceplate holes, thereby preserving the hole diameter integrity and increasing the number of times the faceplate may be cleaned or refurbished while remaining within processing hole diameter tolerances. In an embodiment, the SDR solution comprises, in wt % of the solution, 15.5%+/&#x2212;2% HF or buffered HF acid, 3.8%+/&#x2212;0.5% NHF pH buffer, 59.7%+/&#x2212;5% ethylene glycol, and the balance HO.

Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates

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Milpitas, CA, United States of America

Sio On Lo