Hitachi, Ltd.

Sinpei Iijima

Nobuyoshi Kobayashi

Yuzuru Ohji

Yasuhiro Sugawara

Naruhiko Nakanishi

Misuzu Kanai

A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode a capacitor insulator and an upper electrode wherein the lower electrode is made of a conductive material containing ruthenium dioxide (RuO ) as principle ingredient and the capacitor insulator is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.

Semiconductor integrated circuit device and method of manufacturing the same

A semiconductor integrated circuit device including a memory cell comprising a memory cell selecting MISFET Qs formed on the main surface of a semiconductor substrate and an information storage capacitor C that is connected in series to said memory cell selecting MISFET Qs, and that have a lower electrode , a capacitor insulator and an upper electrode , wherein the lower electrode is made of a conductive material containing ruthenium dioxide (RuO ) as principle ingredient and the capacitor insulator is made of crystalline tantalum pentoxide. Thus, the capacitance required for the memory cells of a 256 Mbits DRAM or those of a DRAM of a later generation can be secured.

Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator

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Akishima, Japan

Sinpei Iijima