Tsinghua University

Sinn-Wen Chen

Jwo-Huei Jou

Chen-Yu Kao

Anbalagan Ramakrishnan

Sueli Sidney Yang

Kiran Kishore Kesavan

Jee-Wei Emily Chen

Ya-Hui Yang

Sudam Chavhan

Kan-San Chou

Mangey Ram Nagar

Sin-Jie Wu

Chiao-Ling Yang

A manufacturing method of an organic light-emitting diode is provided in the present disclosure. The manufacturing method of the organic light-emitting diode includes steps as follows. A substrate is provided and a layered structure forming step is performed. In the layered structure forming step, an anode layer, a scattering layer, an emissive layer and a cathode layer are sequentially formed on the substrate, so as to obtain an organic light-emitting diode. A material of the scattering layer is a quasicrystalline material.

Organic light-emitting diode with scattering layer of aluminum-cobalt-copper nano-quasicrystal and manufacturing method thereof

Thermoelectric material has attracted more attentions as a promising energy material in recent years. Research nowadays are devoted to improvement of figure-of-merit (zT=ST/&#x3c1;&#x3ba;). Motivated by p-type AgSbTecompound, ternary Ag&#x2014;Sb&#x2014;Te has been reported as an important thermoelectric system. Although ternary AgSbTecompound has been considered as a candidate for thermoelectric materials with the advantages of low thermal conductivity (&#x3ba;=0.6 WKm), the relatively high electrical resistivity (&#x3c1;=7.5*10&#x3a9;cm) has limited its applications. This invention disclosed brand-new Ag&#x2014;Sb&#x2014;Te bulk materials with very fine microstructures that nanoscale AgTe phase precipitate uniformly in the multi-phase matrix through class I reaction, liquid=AgTe+AgSbTe+&#x3b4;. Moreover, the electrical resistivity (&#x3c1;) measured by four-probe method is as low as 8.4*10(&#x3a9;cm) at room temperature, which guarantees the promise of those ternary bulk materials.

Thermoelectric material with low electrical resistivity and manufacture thereof

A method for preparing IGZO particles and a method for preparing an IGZO thin film by using the IGZO particles are disclosed. The method for preparing the IGZO particles comprises the following steps: (A) providing a solution of metal acid salts, which contains a zinc salt, an indium salt, and a gallium salt; (B) mixing the solution of the metal acid salts with a basic solution to obtain an oxide precursor; and (C) heating the oxide precursor to obtain IGZO particles.

Method for preparing IGZO particles and method for preparing IGZO film by using the IGZO particles

This invention provides orthodontic archwires with more than one colors, which can be prepared by subjecting the orthodontic archwires to an anodizing treatment.

Orthodontic archwires of various colors and their preparation methods

This invention takes advantage of the characteristics that the effective charge numbers of different metals have different values and even with different signs, and alloys are prepared with the metals of different signs of effective charge numbers. The effective charge numbers of the alloys are the summation of the mole fraction of each constituent metal times its respective effective charge number. Based on the knowledge of the calculated effective charge number, alloys are prepared with proper selection of constituent metals and proper ratios. When the alloy is under the influence of an electric field, the atoms, with the tendency to move in the same direction of the electron flow, interact with the atoms, with the tendency to move in the opposite. The alloys are thus electromigration effect-free or electromigration effect-insignificant.

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Hsinchu, Taiwan

Sinn-Wen Chen