Hitachi, Ltd.

Hitachi Haramachi Semi-Conductor, Ltd.

Sinichi Kurita

Tadaaki Kariya

Tatsuo Shimura

Masato Miura

Norihiro Kawauchi

A lateral-type semiconductor device is provided in which a p-emitter layer and a p-collector layer are formed on the exposed-surface side of an n-base layer. The exposed surfaces of the p-emitter layer and the n-base layer are substantially surrounded by the exposed surface of the p-collector layer. The n-base layer is connected to a base electrode or through a first heavily-doped region extending from under the n-base region to an exposed surface area on the outer-periphery side of the p-collector layer. In an alternative embodiment a second heavily-doped region for connecting the n-base layer and the first heavily-doped region can be provided.

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Mito, Japan

Sinichi Kurita