National Institute for Materials Science

Sinha Jaivardhan

Kazuhiro Hono

Tomoya Nakatani

Seiji Mitani

Takao Furubayashi

Yukiko Takahashi

Masamitsu Hayashi

Masaya Kodzuka

Provided are an element structure in which a magnetic layer has a high magnetic anisotropy constant and saturated magnetization properties in a thickness of 1.5 nm or less, and a magnetic device that uses the element structure. A BCC metal nitride/CoFeB/MgO film structure that uses a nitride of a BCC metal as a seed layer is fabricated. The nitride amount in the BCC metal nitride is preferably less than 60% in terms of volume ratio based on 100% BCC metal. It is thereby possible to readily obtain a perpendicularly magnetized film having the magnetic properties that the perpendicular magnetic anisotropy is 0.1&#xd7;10erg/cmor more and the saturated magnetization is 200 emu/cmor more, even when the thickness of the magnetic layer is 0.3 nm or more and 1.5 nm or less.

Perpendicularly magnetized ultrathin film exhibiting high perpendicular magnetic anisotropy, method for manufacturing same, and application

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Ibaraki, Japan

Sinha Jaivardhan