Taiwan Semiconductor Manufacturing Comp. Ltd.

Applied Materials, Inc.

Sin-Yi Jiang

Yi-Shin Chu

Hsiang-Lin Chen

Yin-Kai Liao

Kuan-Chieh Huang

Jhy-Jyi Sze

Jen-Cheng Liu

Po-Chun Liu

Jyh-Ming Hung

Jung-I Lin

Hsiu-Jen Wang

Shih-Hao Kuo

Chia-Hung Kao

Hsu-Ming Hsu

Bang-Yu Liu

Chih-Ming Hung

Sung-Wen Huang Chen

Neng-Rui Dong

The present disclosure provides a multi-substrate handling system having an alignment apparatus capable of positioning each of a set of substrates in predetermined orientations for transfer. A buffer chamber is configured to receive and condition the set of substrates which are disposed on a substrate carrier. A first transfer assembly is configured to transfer the set of substrates to and from the buffer chamber and is capable of transferring each of the set of substrates from the alignment apparatus to the carrier in the buffer chamber. The carrier includes a plurality of modules capable of securing the set of substrates. The system includes a second transfer assembly having at least two robots configured to transfer the carrier of the set of substrates between the buffer chamber and a process chamber. The process chamber is capable of processing the set of substrates using different process parameters for each substrate.

Multiple substrate handling system and method

The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Passivation layer for epitaxial semiconductor process

Various embodiments of the present disclosure are directed towards a semiconductor structure including a first substrate comprising a first semiconductor material. A first light sensor is disposed within the first substrate. The first light sensor is configured to absorb electromagnetic radiation within a first wavelength range. A second light sensor is disposed within an absorption structure underlying the first substrate. The second light sensor is configured to absorb electromagnetic radiation within a second wavelength range different from the first wavelength range. The absorption structure underlies the first light sensor and comprises a second semiconductor material different from the first semiconductor material.

Vertically stacked light sensors

Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Image sensor with passivation layer for dark current reduction

Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed on and/or in a silicon substrate. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereof

A method of manufacturing a semiconductor structure includes: forming a light-absorption layer in a substrate; forming a first doped region of a first conductivity type and a second doped region of a second conductivity type in the light-absorption layer adjacent to the first doped region; depositing a first patterned mask layer over the light-absorption layer, wherein the first patterned mask layer includes an opening exposing the second doped region and covers the first doped region; forming a first silicide layer in the opening on the second doped region; depositing a barrier layer over the first doped region; and annealing the barrier layer to form a second silicide layer on the first doped region.

Method of manufacturing an optical sensor

A method and structure providing an optical sensor having an optimized Ge—Si interface includes providing a substrate having a pixel region and a logic region. In some embodiments, the method further includes forming a trench within the pixel region. In various examples, and after forming the trench, the method further includes forming a doped semiconductor layer along sidewalls and along a bottom surface of the trench. In some embodiments, the method further includes forming a germanium layer within the trench and over the doped semiconductor layer. In some examples, and after forming the germanium layer, the method further includes forming an optical sensor within the germanium layer.

Semiconductor sensor and methods thereof

The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material. The second semiconductor material is a group IV semiconductor or a group III-V compound semiconductor. A passivation layer is disposed on the second semiconductor material. The passivation layer includes the first semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material.

The present disclosure provides a semiconductor structure, including a substrate including a first material, wherein the first material generates electrical signals from radiation within a first range of wavelengths, an image sensor element including a second material, wherein the second material generates electrical signals from radiation within a second range of wavelengths, the second range is different from first range, a transparent layer proximal to a light receiving surface of the image sensor element, wherein the transparent layer is transparent to radiation within the second range of wavelength, and an interconnect structure connected to a signal transmitting surface of the image sensor element.

Image sensor and manufacturing method thereof

Germanium-based sensors are disclosed herein. An exemplary germanium-based sensor includes a germanium photodiode and a junction field effect transistor (JFET) formed from a germanium layer disposed in a silicon substrate, in some embodiments, or on a silicon substrate, in some embodiments. A doped silicon layer, which can be formed by in-situ doping epitaxially grown silicon, is disposed between the germanium layer and the silicon substrate. In embodiments where the germanium layer is on the silicon substrate, the doped silicon layer is disposed between the germanium layer and an oxide layer. The JFET has a doped polysilicon gate, and in some embodiments, a gate diffusion region is disposed in the germanium layer under the doped polysilicon gate. In some embodiments, a pinned photodiode passivation layer is disposed in the germanium layer. In some embodiments, a pair of doped regions in the germanium layer is configured as an e-lens of the germanium-based sensor.

Growing community of inventors

Hsinchu, Taiwan

Sin-Yi Jiang