Powercubesemi, Inc.

Sin Su Kyoung

Tae Young Kang

Tai Young Kang

You Seung Rim

Eun Ha Kim

Jeong Yun Seo

Tae Jin Nam

Silicon carbide junction barrier Schottky diode disclosed. Silicon carbide junction barrier Schottky diode includes a first conductivity-type substrate, a first conductivity-type epitaxial layer, being formed by epitaxial growth of silicon carbide doped with a first conductivity-type impurity on the first conductivity-type substrate, a charge injection region, being formed on the first conductivity-type epitaxial layer and doped at a concentration of the first conductivity-type impurity higher than that of the first conductivity-type epitaxial layer, a second conductivity-type junction region, being formed on the first conductivity-type epitaxial layer so as to contact the charge injection region, a Schottky metal layer, being formed on the charge injection region and the second conductivity-type junction region, an anode electrode, being formed on the Schottky metal layer, and a cathode electrode, being formed under the first conductivity-type substrate.

Silicon carbide junction barrier Schottky diode with enhanced ruggedness

Schottky diode and method for fabricating the same disclosed. The Schottky diode includes a gallium oxide layer that is a semiconductor layer doped with a first-type dopant, a cathode in ohmic contact with the gallium oxide layer and an anode having a Schottky contact metal layer in Schottky contact with the gallium oxide layer. The gallium oxide layer is in contact with an interface with the Schottky contact metal layer, contains a second-type dopant of a conductivity opposite to that of the first-type dopant, and has an interlayer which is a region where a concentration of the second-type dopant decreases as it moves away from an interface with the Schottky contact metal layer.

Schottky diode and method for fabricating the same

Disclosed is a SiC wide trench-type junction barrier Schottky diode. The Schottky diode includes a SiC N&#x2212; epitaxial layer formed on a SiC N-type substrate and a Schottky metal layer having a planar Schottky metal pattern layer and a downwardly depressed trench-type Schottky metal pattern layer, which are alternately formed at predetermined intervals and on the upper end part of the SiC N&#x2212; epitaxial layer. The Schottky diode includes a Pjunction pattern formed so as to permeate from the lower part of the trench-type Schottky metal pattern layer to the SiC N&#x2212; epitaxial layer and a cathode electrode formed on the lower part of the SiC N-type substrate. The width of the Pjunction pattern is narrower than the width of the trench-type Schottky metal pattern layer, and the Pjunction pattern is not formed on a side wall vertical surface region of the trench-type Schottky metal pattern layer.

Growing community of inventors

Seoul, South Korea

Sin Su Kyoung