Globalfoundries Singapore Pte. Ltd.

Chartered Semiconductor Manufacturing Ltd (corporation)

Sin Leng Lim

Wei Lu

Jong Sung Park

Min Hwan Kim

In Ki Kim

Huang Liu

Johnny Widodo

A semiconductor device includes a substrate having a dielectric layer and a device layer on the substrate. The device layer has an opening. First and second sublayers are disposed on the device layer and line the opening. The second sublayer serves as a stop layer for planarization to provide a substantially planarized top surface for the semiconductor device.

Planarized passivation layer for semiconductor devices

A device layer is configured to reduce change in stress characteristics due to subsequent processing to reduce cracking of a subsequently formed layer. The change in stress characteristics can be reduced by providing a shield layer over the device layer to protect the device layer from exposure to subsequently processing, such as curing medium used to form voids in an ultralow-k dielectric layer.

Integrated circuit having ultralow-K dielectric layer

Growing community of inventors

Singapore, Singapore

Sin Leng Lim