Samsung Electronics Co., Ltd.

Sin-hwan Lim

Han Vit Yang

Seog Heon Ham

Yu Jin Park

Kyo Jin Choo

Jae-Cheol Yun

Michael Choi

Kwang-Hyun Lee

Kyoung-Min Koh

Jung-ho Lee

Hae-sick Sul

Soon-Ik Cho

There are provided an image sensor and a stacked structure thereof. The image sensor includes a pixel array in which a plurality of unit pixels for generating an output signal in accordance with incident light are arranged, a first amplifier having a first input dynamic range, and a second amplifier having a second input dynamic range that is larger than the first input dynamic range. One of the first and second amplifiers amplifies the output signal in accordance with the intensity of light.

Image sensor and stacked structure thereof

A correlated double sampling (CDS) circuit may include a sampling circuit and a switching circuit. The CDS circuit may perform a CDS operation on a reset component of an input signal and an image component of the input signal based on a ramp signal, and the CDS circuit may generate an output signal. The switching circuit may include an auto-zero switch that connects a first input terminal receiving the input signal to an output node in response to an auto-zero control signal during an auto-zero interval. The switching circuit may connect a first terminal of the auto-zero switch to a reference voltage in order to cutoff a leakage current flowing to the auto-zero switch in response to a first boosting control signal during a first comparison interval and a second comparison interval. The output signal may be provided at the output node.

Correlated double sampling circuit and image sensor including the same

One embodiment of an analog-to-digital converter includes at least one comparator and a restriction circuit. The comparator has first and second input nodes and a connection node. The connection node is one of an internal node and an output node of the comparator. The restriction circuit is electrically connected to the connection node, and the restriction circuit is configured to restrict a voltage of the connection node.

Analog-to-digital conversion circuit, and image sensor including the same

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Hwaseong-si, South Korea

Sin-hwan Lim